# US 8,569,881 B2 · Semiconductor device

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- Number: US 8,569,881 B2
- Document ID: US8569881B2
- Status: Granted
- Kind: B2
- Application number: 12/877,657
- Filed: 2010-09-08
- Published: 2012-03-08
- Granted: 2013-10-29
- Earliest claimed: 2010-09-08
- Assignees: Infineon Technologies AG
- Applicants: Reinhold Spanke; Waleri Brekel; Ivonne Benzler
- Inventors: Reinhold Spanke; Waleri Brekel; Ivonne Benzler
- Web page: https://patentgrep.com/patent/US8569881B2

## CPC

- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 90/00: Package configurations
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a baseplate and a first and a second insulated gate bipolar transistor (IGBT) substrate coupled to the baseplate. The semiconductor device includes a first and a second diode substrate coupled to the baseplate and a first, a second, and a third control substrate coupled to the baseplate. Bond wires couple the first and second IGBT substrates to the first control substrate. Bond wires couple the first and second IGBT substrates to the second control substrate via the first and second diode substrates, and bond wires couple the first and second IGBT substrates to the third control substrate via the second diode substrate.

## Claims

### Claim 1

A semiconductor device comprising:
a baseplate;
a first insulated gate bipolar transistor (IGBT) substrate coupled to the baseplate;
a second IGBT substrate coupled to the baseplate;
a first diode substrate coupled to the baseplate;
a second diode substrate coupled to the baseplate;
a first control substrate coupled to the baseplate;
a second control substrate coupled to the baseplate;
a third control substrate coupled to the baseplate;
first bond wires coupling the first IGBT substrate and the second IGBT substrate to the first control substrate;
second bond wires directly and physically coupling the first IGBT substrate and the second IGBT substrate to the second control substrate via the first diode substrate and the second diode substrate; and
third bond wires directly and physically coupling the first IGBT substrate and the second IGBT substrate to the third control substrate via the second diode substrate.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the first IGBT substrate is identical to the second IGBT substrate.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the first diode substrate is identical to the second diode substrate.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the first control substrate, the second control substrate, and the third control substrate are each identical to each other.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the first control substrate provides an auxiliary collector control pad,
wherein the second control substrate provides an auxiliary emitter control pad, and
wherein the third control substrate provides a gate control pad.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein the first diode substrate and the second diode substrate each comprise used and unused control pads, the used control pads configured for electrically coupling the first IGBT substrate and the second IGBT substrate to the second control substrate and to the third control substrate.

### Claim 7 (depends on 1)

The semiconductor device of claim 1, further comprising:
a housing coupled to the baseplate; and
control terminals extending through the housing and coupled to the first control substrate, the second control substrate, and the third control substrate.

### Claim 8 (depends on 1)

The semiconductor device of claim 1, wherein each of the first IGBT substrate, the second IGBT substrate, the first diode substrate, the second diode substrate, the first control substrate, the second control substrate, and the third control substrate comprises a metallized ceramic substrate.

### Claim 9

A chopper module comprising:
a first control substrate;
a second control substrate;
a third control substrate;
an insulated gate bipolar transistor (IGBT) leg coupled to the first control substrate; and
a diode leg comprising signal pads, the signal pads configured to directly and physically couple the IGBT leg to the second control substrate and to the third control substrate via the diode leg.

### Claim 10 (depends on 9)

The chopper module of claim 9, wherein the IGBT leg comprises a first IGBT substrate and a second IGBT substrate, and
wherein the signal pads of the diode leg are configured to couple the first IGBT substrate to the second IGBT substrate via the diode leg.

### Claim 11 (depends on 9)

The chopper module of claim 9, wherein the IGBT leg is aligned with the diode leg, and
wherein the first control substrate, the second control substrate, and the third control substrate are each aligned with each other.

### Claim 12 (depends on 9)

The chopper module of claim 9, wherein the first control substrate and the second control substrate are directly adjacent to the IGBT leg, and
wherein the third control substrate is directly adjacent to the diode leg.

### Claim 13 (depends on 9)

The chopper module of claim 9, further comprising:
a baseplate coupled to the first control substrate, the second control substrate, the third control substrate, the IGBT leg, and the diode leg.

### Claim 14 (depends on 13)

The chopper module of claim 13, further comprising:
a housing coupled to the baseplate; and
control terminals extending through the housing and coupled to the first control substrate, the second control substrate, and the third control substrate.

### Claim 15 (depends on 9)

The chopper module of claim 9, wherein the IGBT leg comprises a first IGBT substrate and a second IGBT substrate, the first IGBT substrate in a mirror symmetrical arrangement with the second IGBT substrate, and
wherein the diode leg comprises a first diode substrate and a second diode substrate, the first diode substrate in a mirror symmetrical arrangement with the second diode substrate.

### Claim 16

A semiconductor device comprising:
a baseplate;
a first insulated gate bipolar transistor (IGBT) substrate coupled to the baseplate;
a second IGBT substrate coupled to the baseplate;
a first diode substrate coupled to the baseplate;
a second diode substrate coupled to the baseplate;
a first control substrate coupled to the baseplate;
a second control substrate coupled to the baseplate; and
a third control substrate coupled to the baseplate,
wherein the first diode substrate and the second diode substrate comprise used and unused control pads, the used control pads configured for directly and physically coupling the first IGBT substrate and the second IGBT substrate to the second control substrate and to the third control substrate.