# US 8,569,854 B2 · Semiconductor imaging instrument and manufacturing method thereof, and camera and manufacturing method thereof

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- Number: US 8,569,854 B2
- Document ID: US8569854B2
- Status: Granted
- Kind: B2
- Application number: 13/347,418
- Filed: 2012-01-10
- Published: 2012-05-03
- Granted: 2013-10-29
- Earliest claimed: 2005-11-14
- Assignees: Sony Corporation
- Applicants: Yoshinori Uchida
- Inventors: Yoshinori Uchida
- Web page: https://patentgrep.com/patent/US8569854B2

## CPC

- H10F 39/1534: {Interline transfer}
- H10F 39/8053: {Colour filters}
- G02B 5/201: {in the form of arrays}
- H10F 39/024: {of coatings or optical elements}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS

## Abstract

A semiconductor imaging instrument is disclosed, including a prescribed substrate, an imaging device array provided on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of received light, and a color filter layer provided on the imaging device array, with an infrared light absorbing dye being contained in the color filter layer.

## Claims

### Claim 1

A semiconductor imaging instrument comprising:
a prescribed substrate;
an imaging device array produced on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of received light;
a color filter layer provided on the imaging device array; and
an infrared light absorbing dye being contained in the color filter layer,
wherein a cyanine based dye which is configured by the following formula is used as the infrared light absorbing dye material:

### Claim 2 (depends on 1)

The semiconductor imaging instrument according to claim 1, wherein the color filter layer comprises a mixture in which a visible light absorbing dye material and the infrared light absorbing dye material are dispersed in a prescribed proportion.

### Claim 3 (depends on 1)

An electronic apparatus comprising the semiconductor imaging instrument according to claim 1.

### Claim 4 (depends on 3)

The electronic apparatus according to claim 3, wherein the electronic apparatus is a camera.

### Claim 5 (depends on 1)

The semiconductor imaging instrument according to claim 1, wherein a flattening film is provided between each of the semiconductor imaging devices and the color filter.

### Claim 6 (depends on 5)

The semiconductor imaging instrument according to claim 5, wherein the color filter is formed on each of the flattening films.

### Claim 7 (depends on 1)

The semiconductor imaging instrument according to claim 1, wherein the color filter is provided between each of the semiconductor imaging devices and an on-chip lens corresponding to each of the semiconductor imaging devices.

### Claim 8 (depends on 1)

The semiconductor imaging instrument according to claim 1, wherein each of the on-chip lenses is formed on the color filter.

### Claim 9 (depends on 1)

The semiconductor imaging instrument according to claim 1, wherein the infrared light absorbing dye contains 25 wt % of the infrared light absorbing dye material.

### Claim 10 (depends on 1)

The semiconductor imaging instrument according to claim 1, wherein the infrared light absorbing dye contains 25 wt % of a visible light absorbing dye material.

### Claim 11 (depends on 9)

The semiconductor imaging instrument according to claim 9, wherein the infrared light absorbing dye contains 25 wt % of a visible light absorbing dye material.

### Claim 12 (depends on 1)

The semiconductor imaging instrument according to claim 1, wherein R and R′ are each (CH3)2.

### Claim 13 (depends on 1)

The semiconductor imaging instrument according to claim 1, wherein X− represents a halogen anion.

### Claim 14 (depends on 13)

The semiconductor imaging instrument according to claim 13, wherein X− is ClO4−.

### Claim 15 (depends on 1)

The semiconductor imaging instrument according to claim 1, wherein n is equal to 0.

### Claim 16 (depends on 1)

The semiconductor imaging instrument according to claim 1, wherein n is equal to 1.

### Claim 17 (depends on 1)

The semiconductor imaging instrument according to claim 1, wherein n is equal to 2.