# US 8,569,853 B2 · Semiconductor light-receiving device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,569,853 B2
- Document ID: US8569853B2
- Status: Granted
- Kind: B2
- Application number: 13/558,725
- Filed: 2012-07-26
- Published: 2013-01-31
- Granted: 2013-10-29
- Earliest claimed: 2011-07-29
- Assignees: Sumitomo Electric Device Innovations, Inc.
- Applicants: Yuji Koyama
- Inventors: Yuji Koyama
- Web page: https://patentgrep.com/patent/US8569853B2

## CPC

- H10F 77/957: {for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes}
- H10F 30/223: the potential barrier being a PIN barrier
- H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A semiconductor light-receiving device includes a semiconductor light-receiving element that has a first electrode and a second electrode, a first wiring coupled to the first electrode, and a second wiring coupled to the second electrode, a width of the second wiring being smaller than a width of the first wiring.

## Claims

### Claim 1

A semiconductor light-receiving device comprising:
a semiconductor light-receiving element that has a first electrode and a second electrode;
a first wiring coupled to the first electrode; and
a second wiring coupled to the second electrode,
a width of the second wiring being smaller than a width of the first wiring.

### Claim 2 (depends on 1)

The semiconductor light-receiving device as claimed in claim 1, wherein:
the second electrode is an electrode to be coupled to an output side; and
the first electrode is an electrode to be coupled to a reference potential side.

### Claim 3 (depends on 1)

The semiconductor light-receiving device as claimed in claim 1, wherein the semiconductor light-receiving element has a mesa structure on a semiconductor substrate.

### Claim 4 (depends on 3)

The semiconductor light-receiving device as claimed in claim 3, wherein one of the first wiring and the second wiring extends from the mesa structure to outside of the mesa structure of the semiconductor substrate.

### Claim 5 (depends on 4)

The semiconductor light-receiving device as claimed in claim 4, wherein one of the first wiring and the second wiring has a region extended to the semiconductor substrate via an upper portion and a side face of the mesa structure, and has a first width on the side face of the mesa structure that is smaller than a second width on the semiconductor substrate.

### Claim 6 (depends on 1)

The semiconductor light-receiving device as claimed in claim 1, wherein a width of a longest region of a parallel region of the second wiring in a length direction is smaller than a width of a longest region of a parallel region of the first wiring in a length direction.

### Claim 7 (depends on 6)

The semiconductor light-receiving device as claimed in claim 6, wherein:
the semiconductor light-receiving element has a mesa structure on a semiconductor substrate; and
lengths of the longest regions of the first wiring and the second wiring are larger than a diameter of an upper face of the mesa structure.

### Claim 8

A semiconductor light-receiving device comprising:
a semiconductor light-receiving element that has a first electrode and a second electrode;
a first wiring coupled to the first wiring; and
a second wiring coupled to the second electrode,
a parasitic capacitance of the first wiring being smaller than a parasitic capacitance of the second wiring.

### Claim 9 (depends on 8)

The semiconductor light-receiving device as claimed in claim 8, wherein a parasitic inductance of the second wiring is smaller than a parasitic inductance of the first wiring.

### Claim 10 (depends on 8)

The semiconductor light-receiving device as claimed in claim 8, wherein:
the first electrode is an electrode to be coupled to an output side; and
the second electrode is an electrode to be coupled to a reference potential side.

### Claim 11

A semiconductor light-receiving device comprising:
a first semiconductor light-receiving element that has a first electrode and a second electrode;
a second semiconductor light-receiving element that has a third electrode and a fourth electrode;
a first wiring of which first end is coupled to the first electrode;
a second wiring of which first end is coupled to the second electrode;
a third wiring of which first end is coupled to the third electrode; and
a fourth wiring of which first end is coupled to the fourth electrode,
widths of the second wiring and the third wiring being smaller than widths of the first wiring and the fourth wiring.

### Claim 12 (depends on 11)

The semiconductor light-receiving device as claimed in claim 11, wherein:
the second wiring and the third wiring are an electrode to be coupled to an output side; and
the first electrode and the fourth electrode are an electrode to be coupled to a reference potential side.

### Claim 13 (depends on 11)

The semiconductor light-receiving device as claimed in claim 11, wherein a second end of the second wiring and a second end of the third wiring are coupled to a different terminal and are coupled to each other on a mount substrate on which the semiconductor light-receiving device is mounted.

### Claim 14 (depends on 11)

The semiconductor light-receiving device as claimed in claim 11, wherein the second end of the second wiring and the second end of the third wiring are coupled in common.

### Claim 15 (depends on 11)

The semiconductor light-receiving device as claimed in claim 11, wherein the first semiconductor light-receiving element and the second semiconductor light-receiving element have a mesa structure on a semiconductor substrate independently from each other.

### Claim 16 (depends on 15)

The semiconductor light-receiving device as claimed in claim 15, wherein the first wiring and the fourth wiring extend from the mesa structure to outside of the mesa structure of the semiconductor substrate.

### Claim 17 (depends on 15)

The semiconductor light-receiving device as claimed in claim 15, wherein:
the first wiring and the fourth wiring have a region extended to the semiconductor substrate via an upper portion and a side face of the mesa structures; and
widths of the first wiring and the fourth wiring on the side face of the mesa structures are smaller than other widths of the first wiring and the fourth wiring on the semiconductor substrate.

### Claim 18 (depends on 11)

The semiconductor light-receiving device as claimed in claim 11, wherein a width of longest regions of parallel regions of the second wiring and the third wiring in a length direction is smaller than widths of longest regions of parallel regions of the first wiring and the fourth wiring in a length direction.

### Claim 19 (depends on 18)

The semiconductor light-receiving device as claimed in claim 18, wherein:
the first semiconductor light-receiving element and the second semiconductor light-receiving element have a mesa structure on a semiconductor substrate; and
lengths of the longest regions of the first wiring, the second wiring, the third wiring and the fourth wiring are larger than a diameter of an upper face of the mesa structure.