# US 8,569,852 B2 · Magnetic oscillation element and spin wave device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,569,852 B2 - Document ID: US8569852B2 - Status: Granted - Kind: B2 - Application number: 13/238,631 - Filed: 2011-09-21 - Published: 2012-09-27 - Granted: 2013-10-29 - Earliest claimed: 2011-03-25 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Hirofumi Morise; Shiho Nakamura; Tsuyoshi Kondo; Yoshinari Kurosaki - Inventors: Hirofumi Morise; Shiho Nakamura; Tsuyoshi Kondo; Yoshinari Kurosaki - Web page: https://patentgrep.com/patent/US8569852B2 ## CPC - H01F 10/329: {Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect} - G01R 33/093: {using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00)} - G01R 33/1284: {Spin resolved measurements; Influencing spins during measurements, e.g. in spintronics devices} - G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell} - H01F 10/3295: {Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers} - H03B 15/006: {using spin transfer effects or giant magnetoresistance} - H10N 50/10: Magnetoresistive devices - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) - G11C: STATIC STORES (semiconductor memory devices H10B) - H03B: GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS (generators adapted for electrophonic musical instruments G10H; masers or lasers H01S; generation of oscillations in plasma H05H) - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR ## Abstract According to one embodiment, a magnetic oscillation element includes a first electrode/a second magnetic layer/a nonmagnetic spacer layer/a first magnetic layer/a second electrode, stacked in this order. The first magnetic layer has variable magnetization direction. The second magnetic layer has fixed magnetization direction. A thickness of the first magnetic layer in a direction connecting the first and second electrodes is greater than 2 times a spin penetration depth of the first magnetic layer. The thickness of the first magnetic layer is less than a maximum width of the second electrode. The first magnetic layer has edge portion provided outside the first surface when viewed along the direction. A width of the edge portion in a direction perpendicular to a tangent of an edge of the second electrode is not less than an exchange length of the first magnetic layer. ## Claims ### Claim 1 A magnetic oscillation element, comprising: a first electrode; a second electrode; a first magnetic layer provided between the first electrode and the second electrode, the first magnetic layer having a variable magnetization direction; a second magnetic layer provided between the first electrode and the first magnetic layer, the second magnetic layer having a fixed magnetization direction; and a first spacer layer being nonmagnetic and provided between the first magnetic layer and the second magnetic layer, the first magnetic layer including: a ferromagnetic fourth magnetic layer; and a ferromagnetic fifth magnetic layer contacting the first spacer layer between the fourth magnetic layer and the first spacer layer, a thickness of the first magnetic layer in a first direction connecting the first electrode and the second electrode being greater than 2 times a thickness of the fifth magnetic layer in the first direction, the thickness of the first magnetic layer being less than a maximum width of a first surface of the second electrode on the first magnetic layer side, the first magnetic layer having a first edge portion provided outside the first surface when viewed along the first direction, a width of the first edge portion in a direction perpendicular to a tangent of an edge of the first surface being not less than an exchange length of the fifth magnetic layer. ### Claim 2 (depends on 1) The element according to claim 1, wherein the maximum width of the first surface is not more than 100 nanometers. ### Claim 3 (depends on 1) The element according to claim 1, wherein the fifth magnetic layer includes an alloy including at least one selected from the group consisting of Fe, Co, and Ni or an alloy including at least one selected from the group consisting of Fe, Co, Ni, Mn, and Cr. ### Claim 4 (depends on 1) The element according to claim 1, further comprising an antiferromagnetic layer provided between the second magnetic layer and the first electrode. ### Claim 5 (depends on 1) The element according to claim 1, further comprising: a third magnetic layer provided between the first magnetic layer and the second electrode, the third magnetic layer having a fixed magnetization direction in a direction parallel to the magnetization direction of the second magnetic layer; and a second spacer layer being nonmagnetic and provided between the first magnetic layer and the third magnetic layer. ### Claim 6 (depends on 1) The element according to claim 1, wherein: a magnetization of the first magnetic layer oscillates when a current is caused to flow between the first electrode and the second electrode; the first magnetic layer has a first portion on the first electrode side and a second portion on the second electrode side; and a phase of the oscillation of the magnetization of the first portion is different from a phase of the oscillation of the magnetization of the second portion. ### Claim 7 (depends on 1) The element according to claim 1, wherein a current is conducted from the first magnetic layer toward the second magnetic layer via the first electrode and the second electrode. ### Claim 8 (depends on 1) The element according to claim 1, wherein at least one selected from the first magnetic layer and the second magnetic layer includes an alloy including at least one element selected from the group consisting of Fe, Co, Ni, Mn, and Cr and at least one element selected from the group consisting of Pt, Pd, Ir, Ru, and Rh. ### Claim 9 (depends on 7) The element according to claim 7, wherein a minimum thickness of the first magnetic layer in a first direction connecting the first electrode and the second electrode is greater than 2 times a thickness of the fifth magnetic layer in the first direction, a maximum thickness of the first magnetic layer is less than a maximum width of a first surface of the second electrode on the first magnetic layer side.