Nonvolatile semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorMasahiro Kiyotoshi
Life of this patent
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Abstract
A nonvolatile semiconductor memory device according to an embodiment includes memory strings which have a plurality of transistors including gate electrode films formed over sides of columnar semiconductor films on gate dielectric films in a height direction of the semiconductor films, and which are arranged in a matrix shape substantially perpendicularly above a substrate. The gate electrode films of the transistors at same height of the memory strings arranged in a first direction are connected to one another. A distance between the semiconductor films at least in a forming position of the transistor at an uppermost layer of the memory strings adjacent to each other in the first direction is smaller than double of thickness of the gate dielectric films.
Claims8
A nonvolatile semiconductor memory device comprising:
- memory strings which have a plurality of transistors including gate electrode films formed on gate dielectric films over sides of columnar semiconductor films in a height direction of the semiconductor films, and which are arranged substantially perpendicularly above a substrate, wherein
- the memory strings are arranged above the substrate such that memory string groups each having two memory string rows, in which the gate electrode films of the transistors at same height of the memory strings arranged in a first direction are connected, arranged in parallel adjacent to each other in a second direction perpendicular to the first direction are arranged at a predetermined interval in the second direction, and
- the nonvolatile semiconductor memory device further including a film that is formed between the two memory string rows arranged in parallel adjacent to each other in the second direction in the memory string group to electrically separate between the gate electrode films provided to respectively correspond to the two memory string rows.
Dependencies are inferred from the claim text.