# US 8,569,822 B2 · Memory structure

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- Number: US 8,569,822 B2
- Document ID: US8569822B2
- Status: Granted
- Kind: B2
- Application number: 13/287,728
- Filed: 2011-11-02
- Published: 2013-05-02
- Granted: 2013-10-29
- Earliest claimed: 2011-11-02
- Assignees: Macronix International Co., Ltd.
- Applicants: Jyun-Siang Huang; Wen-Jer Tsai; Shih-Guei Yan
- Inventors: Jyun-Siang Huang; Wen-Jer Tsai; Shih-Guei Yan
- Web page: https://patentgrep.com/patent/US8569822B2

## CPC

- H10D 30/6893: {wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate}
- H10B 41/30: characterised by the memory core region
- H10B 43/30: characterised by the memory core region
- H10D 30/0411: {of FETs having floating gates}
- H10D 30/0413: {of FETs having charge-trapping gate insulators, e.g. MNOS transistors}
- H10D 30/689: {Vertical floating-gate IGFETs}
- H10D 30/693: {Vertical IGFETs having charge trapping gate insulators}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A memory structure having a memory cell including a first dielectric layer, a gate, a semiconductor layer, a first doped region, a second doped region and a charge storage layer is provided. The first dielectric layer is on the substrate. The gate includes a base portion on the first dielectric layer and a protruding portion disposed on the base portion and partially exposing the base portion. The semiconductor layer is conformally disposed on the gate, and includes a top portion over the protruding portion, a bottom portion over the base portion exposed by the protruding portion and a side portion located at a sidewall of the protruding portion and connecting the top and bottom portions. The first and second doped regions are respectively in the top and bottom portions. The side portion serves as a channel region. The charge storage layer is between the gate and the semiconductor layer.

## Claims

### Claim 1

A memory structure, comprising a memory cell comprising:
a first dielectric layer, disposed on a substrate;
a control gate, comprising:
a base portion, disposed on the first dielectric layer; and
a protruding portion, disposed on the base portion and exposing a portion of the base portion;
a semiconductor layer, conformally disposed on the control gate and comprising:
a top portion, disposed over the protruding portion;
a bottom portion, disposed over the base portion exposed by the protruding portion; and
a side portion, disposed at a sidewall of the protruding portion and connecting the top portion and the bottom portion;
a first doped region and a second doped region, respectively disposed in the top portion and the bottom portion, wherein the side portion serves as a channel region; and
a charge storage layer, disposed between the control gate and the semiconductor layer.

### Claim 2 (depends on 1)

The memory structure of claim 1, wherein a material of the first dielectric layer comprises silicon oxide.

### Claim 3 (depends on 1)

The memory structure of claim 1, wherein a material of the control gate comprises doped polysilicon.

### Claim 4 (depends on 1)

The memory structure of claim 1, wherein a material of the semiconductor layer comprises polysilicon.

### Claim 5 (depends on 1)

The memory structure of claim 1, wherein the charge storage layer comprises:
a second dielectric layer, disposed on the control gate;
a third dielectric layer, disposed on the second dielectric layer; and
a charge trapping layer, disposed between the second dielectric layer and the third dielectric layer.

### Claim 6 (depends on 5)

The memory structure of claim 5, wherein a material of each of the second dielectric layer and the third dielectric layer comprises silicon oxide.

### Claim 7 (depends on 5)

The memory structure of claim 5, wherein a material of the charge trapping layer comprises a high-K material or a nano-crystal material.

### Claim 8 (depends on 1)

The memory structure of claim 1, wherein when the memory structure comprises a plurality of memory cells, adjacent control gates on the same word line are connected to each other through the base portion.

### Claim 9 (depends on 1)

The memory structure of claim 1, wherein when the memory structure comprises a plurality of memory cells, two adjacent side portions located between two adjacent protruding portions are disposed separately from each other.

### Claim 10 (depends on 1)

The memory structure of claim 1, further comprising a plurality of contacts respectively connected to the first doped region and the second doped region.