Back to results
US 8,569,821 B2Granted
Semiconductor devices and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSangjin Hyun, Yugyun Shin, Hagju Cho, Hyung-seok Hong
Life of this patent
Estimating the term…
Abstract
Provided are a semiconductor device and a method of forming the same. The method may include forming a gate dielectric layer including a plurality of elements on a substrate; supplying a specific element to the gate dielectric layer; forming a product though reacting the specific element with at least one of the plurality of elements; and removing the product.
Claims8
A semiconductor device comprising:
- a substrate comprising first and second regions one of which is an NMOS region and the other of which is a PMOS region;
- a first gate electrode on the first region of the substrate;
- a first gate dielectric layer disposed on the first region between the substrate and the first gate electrode, wherein the first gate dielectric layer comprises fluorine;
- and
- a second gate dielectric layer and a second gate electrode disposed on the second region and wherein the first gate dielectric layer is thinner than the second gate dielectric layer.
2 more elements
Dependencies are inferred from the claim text.