# US 8,569,819 B1 · Doped electrodes for DRAM applications

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- Number: US 8,569,819 B1
- Document ID: US8569819B1
- Status: Granted
- Kind: B1
- Application number: 13/915,050
- Filed: 2013-06-11
- Published: 2013-10-17
- Granted: 2013-10-29
- Earliest claimed: 2011-08-29
- Assignees: Intermolecular, Inc.; Elpida Memory, Inc.
- Applicants: Intermolecular, Inc.; Elpida Memory, Inc.
- Inventors: Xiangxin Rui; Hiroyuki Ode
- Web page: https://patentgrep.com/patent/US8569819B1

## CPC

- H10D 1/694: {comprising noble metals or noble metal oxides}
- H10D 1/68: Capacitors having no potential barriers
- H10D 1/692: {Electrodes}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A metal oxide first electrode layer for a MIM DRAM capacitor is formed wherein the first and/or second electrode layers contain one or more dopants up to a total doping concentration that will not prevent the electrode layers from crystallizing during a subsequent anneal step. One or more of the dopants has a work function greater than about 5.0 eV. One or more of the dopants has a resistivity less than about 1000 μΩcm. Advantageously, the electrode layers are conductive molybdenum oxide.

## Claims

### Claim 1

A semiconductor layer stack comprising:
a first electrode layer formed on a substrate,
wherein the first electrode layer comprises molybdenum oxide and one or more dopants, the one or more dopants comprising Ni, Ir, Pt, RuO2, IrO2, NiO or combinations thereof;
a dielectric layer formed on the first electrode layer, the dielectric layer comprising titanium oxide; and
a second electrode layer formed on the dielectric layer,
wherein the one or more dopants have a predetermined concentration such that the molybdenum oxide is in a crystalline phase prior to forming the dielectric layer on the first electrode layer,
wherein the second electrode layer comprises a metal element, and
wherein the first electrode layer serves as a template for a rutile phase of titanium oxide of the dielectric layer while forming the dielectric layer on the first electrode layer.

### Claim 2 (depends on 1)

The semiconductor layer stack of claim 1 wherein the one or more dopants have a work function value of greater than about 5 eV.

### Claim 3 (depends on 1)

The semiconductor layer stack of claim 1 wherein the one or more dopants have a resistivity value of less than about 1000 μΩcm.

### Claim 4 (depends on 1)

The semiconductor layer stack of claim 1 wherein the one or more dopants comprise RuO2, IrO2, or combinations thereof.

### Claim 5 (depends on 1)

The semiconductor layer stack of claim 1, wherein the second electrode comprises one or more dopants, and wherein the one or more dopants in the second electrode layer are the same as the one or more dopants in the first electrode layer.

### Claim 6 (depends on 1)

The semiconductor layer stack of claim 1, wherein the second electrode comprises one or more dopants, and wherein the one or more dopants in the second electrode layer are different from the one or more dopants in the first electrode layer.

### Claim 7 (depends on 1)

The semiconductor layer stack of claim 1 further comprising annealing the first electrode layer wherein the first electrode layer exhibits 30% crystallinity after the anneal.

### Claim 8 (depends on 7)

The semiconductor layer stack of claim 7 wherein the annealing of the first electrode occurs in a reducing atmosphere.

### Claim 9 (depends on 8)

The semiconductor layer stack of claim 8 wherein the reducing atmosphere comprises between about 1% and about 10% H2 in N2.

### Claim 10 (depends on 7)

The semiconductor layer stack of claim 7 wherein the annealing occurs in a temperature range between about 400 C and about 650 C.

### Claim 11 (depends on 7)

The semiconductor layer stack of claim 7 wherein the annealing occurs in between about 1 millisecond and about 60 minutes.

### Claim 12 (depends on 1)

The semiconductor layer stack of claim 1 wherein the dielectric layer contains a dopant.

### Claim 13 (depends on 12)

The semiconductor layer stack of claim 12 wherein the dopant comprises Al at a concentration between about 5 atomic % and about 15 atomic %.

### Claim 14 (depends on 1)

The semiconductor layer stack of claim 1 further comprising a buffer layer formed between the substrate and the first electrode layer.

### Claim 15 (depends on 14)

The semiconductor layer stack of claim 14 wherein the buffer layer comprises a conductive metal nitride.

### Claim 16 (depends on 14)

The semiconductor layer stack of claim 14 wherein the buffer layer comprises molybdenum nitride.