# US 8,569,814 B2 · Laser annealing method and laser annealing device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,569,814 B2 - Document ID: US8569814B2 - Status: Granted - Kind: B2 - Application number: 13/222,427 - Filed: 2011-08-31 - Published: 2012-03-08 - Granted: 2013-10-29 - Earliest claimed: 2006-01-13 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Kenichiro Nishida; Ryusuke Kawakami; Norihito Kawaguchi; Miyuki Masaki - Inventors: Kenichiro Nishida; Ryusuke Kawakami; Norihito Kawaguchi; Miyuki Masaki - Web page: https://patentgrep.com/patent/US8569814B2 ## CPC - B23K 26/0738: {into a linear shape} - B23K 26/0608: {in the same heat affected zone [HAZ] (B23K26/0613, B23K26/0619 take precedence)} - B23K 26/067: Dividing the beam into multiple beams, e.g. multi-focusing - B23K 26/0732: {into a rectangular shape} - H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) - H10D 86/0229: {characterised by control of the annealing or irradiation parameters} - H10P 14/3411: {Silicon, silicon germanium or germanium} - H10P 14/381: {Beam shaping, e.g. using a mask} - H10P 14/382: {Scanning of a beam} - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens array or a light guide and concentrating optical systems or by the use of an optical system including a diffracting optical element. Accordingly, since the effective energy range of a laser beam applied to the amorphous semiconductor film is widened and the transport speed of a substrate can be enhanced as much, it is possible to improve the processing ability of the laser annealing. ## Claims ### Claim 1 A laser irradiation device comprising: a first cylindrical lens; a second cylindrical lens; an optical system interposed between the first cylindrical lens and the second cylindrical lens, the optical system including a first glass plate and a second glass plate, wherein the first glass plate and the second glass plate are adjacent to each other, and wherein a first length of the first glass plate is different from a second length of the second glass plate. ### Claim 2 (depends on 1) The laser irradiation device according to claim 1, further comprising: a light guide provided so that a laser beam passing through the light guide enters the first cylindrical lens. ### Claim 3 (depends on 1) The laser irradiation device according to claim 1, further comprising: a cylindrical lens array between the first cylindrical lens and the second cylindrical lens. ### Claim 4 (depends on 1) The laser irradiation device according to claim 1, further comprising: a second optical system between the first cylindrical lens and the second cylindrical lens, the second optical system including a third glass plate and a fourth glass plate, wherein a third length of the third glass plate is different from a fourth length of the fourth glass plate, wherein the third glass plate and the fourth glass plate are arranged in a second direction, and wherein a short-side direction of a laser beam is substantially parallel to the second direction. ### Claim 5 (depends on 1) The laser irradiation device according to claim 1, wherein the laser irradiation device is capable of being used for forming a film that includes polycrystal. ### Claim 6 A laser irradiation device comprising: a laser source; a first cylindrical lens; a second cylindrical lens; an optical system interposed between the first cylindrical lens and the second cylindrical lens, the optical system including a first glass plate and a second glass plate, wherein a first length of the first glass plate is different from a second length of the second glass plate, wherein the first glass plate and the second glass plate are arranged in a first direction, and wherein a long-side direction of a laser beam is substantially parallel to the first direction. ### Claim 7 (depends on 6) The laser irradiation device according to claim 6, further comprising: a light guide between the laser source and the first cylindrical lens. ### Claim 8 (depends on 6) The laser irradiation device according to claim 6, further comprising: a cylindrical lens array between the first cylindrical lens and the second cylindrical lens. ### Claim 9 (depends on 6) The laser irradiation device according to claim 6, further comprising: a second optical system between the first cylindrical lens and the second cylindrical lens, the second optical system including a third glass plate and a fourth glass plate, wherein a third length of the third glass plate is different from a fourth length of the fourth glass plate, wherein the third glass plate and the fourth glass plate are arranged in a second direction, and wherein a short-side direction of the laser beam is substantially parallel to the second direction. ### Claim 10 (depends on 6) The laser irradiation device according to claim 6, wherein the laser irradiation device is capable of being used for forming a film that includes polycrystal. ### Claim 11 A laser irradiation device comprising: a solid laser source; a first cylindrical lens; a second cylindrical lens; an optical system interposed between the first cylindrical lens and the second cylindrical lens, the optical system including a first glass plate and a second glass plate, wherein a first length of the first glass plate is different from a second length of the second glass plate, wherein the first glass plate and the second glass plate are arranged in a first direction, and wherein a long-side direction of a laser beam is substantially parallel to the first direction. ### Claim 12 (depends on 11) The laser irradiation device according to claim 11, further comprising a light guide between the solid laser source and the first cylindrical lens. ### Claim 13 (depends on 11) The laser irradiation device according to claim 11, further comprising a cylindrical lens array between the first cylindrical lens and the second cylindrical lens. ### Claim 14 (depends on 11) The laser irradiation device according to claim 11, further comprising: a second optical system between the first cylindrical lens and the second cylindrical lens, the second optical system including a third glass plate and a fourth glass plate, wherein a third length of the third glass plate is different from a fourth length of the fourth glass plate, wherein the third glass plate and the fourth glass plate are arranged in a second direction, and wherein a short-side direction of the laser beam is substantially parallel to the second direction. ### Claim 15 (depends on 11) The laser irradiation device according to claim 11, wherein the laser irradiation device is capable of being used for forming a film that includes polycrystal.