# US 8,569,813 B2 · Inductive load driving circuit > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,569,813 B2 - Document ID: US8569813B2 - Status: Granted - Kind: B2 - Application number: 11/834,097 - Filed: 2007-08-06 - Published: 2008-05-01 - Granted: 2013-10-29 - Earliest claimed: 2006-10-30 - Assignees: Texas Instruments Incorporated - Applicants: Hiroyuki Tomomatsu; Tohru Katoh; Motoaki Kusamaki; Tetsuhiko Kinoshita - Inventors: Hiroyuki Tomomatsu; Tohru Katoh; Motoaki Kusamaki; Tetsuhiko Kinoshita - Web page: https://patentgrep.com/patent/US8569813B2 ## CPC - H10F 30/223: the potential barrier being a PIN barrier - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract The objective of this invention is to provide a photodiode which has high sensitivity even to light with a wavelength in the blue region while maintaining the high-frequency characterstics. The n type second semiconductor layer (13) containing an n type electroconductive impurity at a low concentration is formed directly or via an intrinsic semiconductor layer (11) on the p type first semiconductor layer (10). The third semiconductor layer (20) containing an n type electroconductive impurity at a medium concentration is formed shallower than said second semiconductor layer (13) in its main plane. The fourth semiconductor layer (21) containing an n type electroconductive impurity at a high concentration is formed shallower than said third semiconductor layer (20) in the main plane of the third semiconductor layer (20). The metal-containing electroconductive layer (22) is formed on said fourth semiconductor layer (21) in the same layout as the fourth semiconductor layer (21), with the third semiconductor layer (20) and the fourth semiconductor layer (21) being separated by the second semiconductor layer (13) in at least one cross section. ## Claims ### Claim 1 A photodiode having: a p type first semiconductor layer, an n type second semiconductor layer formed directly or via an intrinsic semiconductor layer on said first semiconductor layer and containing an n type electroconductive impurity at a low concentration, an n type third semiconductor layer that contains an n type electroconductive impurity at a medium concentration and is formed shallower than said second semiconductor layer in the main plane of the second semiconductor layer in a layout subdivided by said second semiconductor layer in at least one cross section, an n type fourth semiconductor layer that contains an n type electroconductive impurity at a high concentration and is formed shallower than said third semiconductor layer in the main plane of the third semiconductor layer in a layout subdivided by said second semiconductor layer in at least one cross section, and a metal-containing electroconductive layer formed on said fourth semiconductor layer in the same layout as the fourth semiconductor layer. ### Claim 2 (depends on 1) The photodiode described in claim 1 characterized by the fact that when a prescribed voltage is applied to said first semiconductor layer and second semiconductor layer, a depletion layer is formed in the area near the main plane of the second semiconductor layer in the region where said fourth semiconductor layer is subdivided. ### Claim 3 A photodiode having: a p type first semiconductor layer, an n type second semiconductor layer formed directly on said first semiconductor layer and containing an n type electroconductive impurity at a low concentration, an n type third semiconductor layer that contains an n type electroconductive impurity at a medium concentration and is formed shallower than said second semiconductor layer in the main plane of the second semiconductor layer, an n type fourth semiconductor layer that contains an n type electroconductive impurity at a high concentration and is formed shallower than said third semiconductor layer in the main plane of the third semiconductor layer in a layout subdivided by said third semiconductor layer in at least one cross section, and a metal-containing electroconductive layer formed on said fourth semiconductor layer in the same layout as the fourth semiconductor layer. ### Claim 4 (depends on 3) The photodiode described in claim 3 characterized by the fact that when a prescribed voltage is applied to said first semiconductor layer and second semiconductor layer, a depletion layer is formed in the area near the main plane of the third semiconductor layer in the region where said fourth semiconductor layer is subdivided. ### Claim 5 (depends on 4) The photodiode described in claim 4 characterized by the fact that said metal-containing electroconductive layer is a metal silicide layer. ### Claim 6 (depends on 5) The photodiode described in claim 5 characterized by the fact that the layout of said fourth semiconductor layer and the metal-containing electroconductive layer is a lattice-shaped pattern. ### Claim 7 (depends on 5) The photodiode described in claim 5 characterized by the fact that the layout of said fourth semiconductor layer and the metal-containing electroconductive layer has a pattern of plural straight lines. ### Claim 8 A photodiode having: a first semiconductor layer of a first electroconductivity type, a second semiconductor layer of a second electroconductivity type formed on said first semiconductor layer, a third semiconductor layer of the second electroconductivity type and having a higher impurity concentration than said second semiconductor layer that is formed partially in the main plane of said second semiconductor layer, a metal silicide layer formed on said third semiconductor layer, and a first electrode electrically connected to said metal silicide layer and said third semiconductor layer. ### Claim 9 (depends on 8) The photodiode described in claim 8 characterized by also having an intrinsic layer formed between said first semiconductor layer and second semiconductor layer and a second electrode electrically connected to said intrinsic layer. ### Claim 10 (depends on 8, 9) The photodiode described in claim 8 or 9 characterized by also having a fourth semiconductor layer of the second electroconductivity type, which is formed between the second and third semiconductor layers and has a higher impurity concentration than the second semiconductor layer and a lower impurity concentration than the third semiconductor layer. ### Claim 11 (depends on 9) The photodiode described in claim 9 characterized by also having a fourth semiconductor layer of the second electroconductivity type formed between said intrinsic layer and the second semiconductor layer and having a lower impurity concentration than the second semiconductor layer. ### Claim 12 (depends on 11) The photodiode described in claim 11 characterized by the fact that the third semiconductor layer and the metal silicide layer are formed in a lattice shape. ### Claim 13 (depends on 11) The photodiode described in claim 11 characterized by the fact that the third semiconductor layer and the metal silicide layer are formed in a strip shape. ### Claim 14 (depends on 13) The photodiode described in claim 13 characterized by also having an antireflection film formed on the second semiconductor layer and serving as the silicide blocking layer for said metal silicide layer. ### Claim 15 (depends on 14) The photodiode described in claim 14 characterized by the fact that said first electroconductivity type is p type, while said second electroconductivity type is n type. ### Claim 16 (depends on 15) The photodiode described in claim 15 characterized by the fact that a depletion layer is formed in the main plane part of the second semiconductor layer between the second and third semiconductor layers.