# US 8,569,802 B2 · Semiconductor device and display device

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- Number: US 8,569,802 B2
- Document ID: US8569802B2
- Status: Granted
- Kind: B2
- Application number: 13/548,481
- Filed: 2012-07-13
- Published: 2012-12-06
- Granted: 2013-10-29
- Earliest claimed: 2002-12-25
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Yoshiyuki Kurokawa
- Inventors: Yoshiyuki Kurokawa
- Web page: https://patentgrep.com/patent/US8569802B2

## CPC

- G02F 1/13454: {Drivers integrated on the active matrix substrate (G02F1/136277 takes precedence)}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

It is an object of the invention to provide a thin, lightweight, high performance, and low in cost semiconductor device and a display device by reducing an arrangement area required for a power supply wiring and a ground wiring of a functional circuit and decreasing a drop in power supply voltage and a rise in ground voltage. In the functional circuit of the semiconductor device and the display device, a power supply wiring and a ground wiring are formed in a comb-like arrangement, and the tips thereof are electrically connected with a first wiring, a second wiring, and a contact between the first wiring and the second wiring, thereby forming in a grid-like arrangement. The drop in power supply voltage and the rise in ground voltage can be decreased and the arrangement area can be decreased in the grid-like arrangement.

## Claims

### Claim 1

A display device comprising:
a transistor comprising a gate, a source and a drain;
a first layer comprising a power supply wiring for supplying a power supply voltage; and
a second layer comprising a wiring, which comprises the same material as the gate,
wherein the power supply wiring is formed in a comb-like arrangement, and comprises a first tip and a second tip; and
wherein the wiring is in direct contact with the first tip and the second tip, and
wherein a conductive path is defined between the power supply wiring and the wiring.

### Claim 2 (depends on 1)

The display device according to claim 1,
wherein the display device is a liquid crystal display device or a display device using a self light-emitting element.

### Claim 3 (depends on 1)

The display device according to the claim 1,
wherein the transistor is formed over a substrate, and the substrate is one selected from the group consisting of a glass substrate, a quartz substrate, a plastic substrate, a silicon substrate, a metal substrate and a stainless substrate.

### Claim 4

A display device comprising:
a transistor comprising a gate, a source and a drain; and
a power supply wiring for supplying a power supply voltage,
wherein the power supply wiring is formed in a grid-like arrangement,
wherein the power supply wiring comprises:
a first conductive thin film formed in a comb-like arrangement comprising a first tip and a second tip;
a second conductive thin film formed in the same layer as the first conductive thin film; and
a third conductive thin film and a fourth conductive thin film which comprise the same material as the gate,
wherein the third conductive thin film is electrically connected to the first tip and the second conductive thin film,
wherein the fourth conductive thin film is electrically connected to the second tip and the second conductive thin film, and
wherein a conductive path is defined between the first conductive thin film and the second conductive thin film through the third conductive thin film and the fourth conductive thin film.

### Claim 5 (depends on 4)

The display device according to claim 4,
wherein the display device is a liquid crystal display device or a display device using a self light-emitting element.

### Claim 6 (depends on 4)

The display device according to the claim 4,
wherein the transistor is formed over a substrate, and the substrate is one selected from the group consisting of a glass substrate, a quartz substrate, a plastic substrate, a silicon substrate, a metal substrate and a stainless substrate.

### Claim 7

A display device comprising:
a display portion; and
a functional circuit, the functional circuit comprising:
a transistor comprising a gate, a source and a drain;
a first layer comprising a power supply wiring for supplying a power supply voltage; and
a second layer comprising a wiring, which comprises the same material as the gate,
wherein the power supply wiring is formed in a comb-like arrangement,
wherein the wiring is electrically connected to tips of the power supply wiring, and
wherein a conductive path is defined between the power supply wiring and the wiring.

### Claim 8 (depends on 7)

The display device according to claim 7,
wherein the display device is a liquid crystal display device or a display device using a self light-emitting element.

### Claim 9 (depends on 7)

The display device according to the claim 7,
wherein the transistor is formed over a substrate, and the substrate is one selected from the group consisting of a glass substrate, a quartz substrate, a plastic substrate, a silicon substrate, a metal substrate and a stainless substrate.

### Claim 10 (depends on 7)

The display device according to claim 7,
wherein the functional circuit comprises one selected from the group consisting of a central processing unit, a memory device, a static memory, a dynamic memory, a nonvolatile memory, an image processing circuit, and a digital signal processor.