# US 8,569,796 B2 · Semiconductor wafer and semiconductor device having multilayered nitride semiconductor layer

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- Number: US 8,569,796 B2
- Document ID: US8569796B2
- Status: Granted
- Kind: B2
- Application number: 13/314,466
- Filed: 2011-12-08
- Published: 2012-07-19
- Granted: 2013-10-29
- Earliest claimed: 2011-01-14
- Assignees: Sanken Electric Co., Ltd.
- Applicants: Tetsuji Matsuo
- Inventors: Tetsuji Matsuo
- Web page: https://patentgrep.com/patent/US8569796B2

## CPC

- H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/825: containing nitrogen, e.g. GaN
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A semiconductor wafer includes a multilayered film having a structure in which nondoped first nitride semiconductor layers and nondoped second nitride semiconductor layers with a larger lattice constant than the first nitride semiconductor layer are laminated alternately, and a nondoped third nitride semiconductor layer which is located on the multilayered film and has a larger lattice constant than the first nitride semiconductor layer, wherein the semiconductor wafer has conductivity in a film-thickness direction.

## Claims

### Claim 1

A semiconductor wafer comprising:
a multilayered film having a structure in which nondoped first nitride semiconductor layers and nondoped second nitride semiconductor layers with a larger lattice constant than the first nitride semiconductor layer are laminated alternately; and
a nondoped third nitride semiconductor layer which is located on the multilayered film and has a larger lattice constant than the first nitride semiconductor layer,
wherein the semiconductor wafer has conductivity in a film-thickness direction, and
a plurality of the multilayered films are included, and the multilayered film is located both above and underneath the third nitride semiconductor layer.

### Claim 2 (depends on 1)

The semiconductor wafer according to claim 1, wherein at least three layers of both the first nitride semiconductor layers and the second nitride semiconductor layers are laminated in the multilayered film.

### Claim 3 (depends on 1)

The semiconductor wafer according to claim 1, wherein a plurality of the third nitride semiconductor layers are included.

### Claim 4 (depends on 1)

The semiconductor wafer according to claim 1, wherein the first nitride semiconductor layer and the second nitride semiconductor layer have film thicknesses which allow carrier to pass through in the film-thickness direction due to a tunnel effect.

### Claim 5

A semiconductor device, comprising:
a semiconductor functional layer formed of nitride semiconductor in which both surfaces thereof are defined by a first main surface and a second main surface which faces the first main surface;
a laminated body which is located on the second main surface and is conductive in a film-thickness direction, including a multilayered film having a structure in which nondoped first nitride semiconductor layers and nondoped second nitride semiconductor layers having a larger lattice constant than the first nitride semiconductor layer are laminated alternately, and a nondoped third nitride semiconductor layer which is located on the multilayered film and has a larger lattice constant than the first nitride semiconductor layer; and
a pair of electrodes facing each other through the semiconductor functional layer and the laminated body
wherein the laminated body includes a plurality of the multilayered films, and the multilayered film is located both above and underneath the third nitride semiconductor layer.

### Claim 6 (depends on 5)

The semiconductor device according to claim 5, wherein a current flows between the pair of electrodes in the film-thickness direction through the semiconductor functional layer and the laminated body.