# US 8,569,784 B2 · Light emitting device and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,569,784 B2 - Document ID: US8569784B2 - Status: Granted - Kind: B2 - Application number: 13/618,952 - Filed: 2012-09-14 - Published: 2013-01-10 - Granted: 2013-10-29 - Earliest claimed: 2008-11-24 - Assignees: LG Innotek Co., Ltd. - Applicants: Sung Min Hwang; Hyun Kyong Cho; Gyeong Geun Park - Inventors: Sung Min Hwang; Hyun Kyong Cho; Gyeong Geun Park - Web page: https://patentgrep.com/patent/US8569784B2 ## CPC - H10H 20/8162: {Current-blocking structures} - H10H 20/856: Reflecting means - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A light emitting device according to an embodiment includes a second electrode layer comprising at least one projection part; at least one current blocking layer on the projection part of the second electrode layer; a second conductive type semiconductor layer on the second electrode layer and the current blocking layer; an active layer on the second conductive type semiconductor layer; a first conductive type semiconductor layer on the active layer; and a first electrode layer on the first conductive type semiconductor layer, at least a portion of the first electrode layer corresponding with the current blocking layer in a vertical direction. ## Claims ### Claim 1 A light emitting device, comprising: a second electrode layer comprising a projection part, wherein the second electrode layer has a first surface and a second surface of the projection part; a current blocking layer on the second surface of the projection part; a second conductive type semiconductor layer on the first surface of the second electrode layer and the current blocking layer; an active layer on the second conductive type semiconductor layer; a first conductive type semiconductor layer on the active layer; and a first electrode layer on the first conductive type semiconductor layer, at least a portion of the first electrode layer corresponding with the current blocking layer in a vertical direction, wherein the second conductive type semiconductor layer has a recess corresponding with the current blocking layer. ### Claim 2 (depends on 1) The light emitting device according to claim 1, wherein the first surface has a flat surface and the second surface of the projection part has inclined surfaces. ### Claim 3 (depends on 2) The light emitting device according to claim 2, wherein the inclined surfaces of the second surface meet the first surface of the second electrode layer. ### Claim 4 (depends on 1) The light emitting device according to claim 1, wherein the projection part is disposed on a central portion of the second electrode layer. ### Claim 5 (depends on 1) The light emitting device according to claim 1, wherein the current blocking layer has a substantially triangular shape. ### Claim 6 (depends on 1) The light emitting device according to claim 1, wherein the current blocking layer is formed of at least one of titanium (Ti), zirconium (Zr), chrome (Cr), gold (Au) or tungsten (W), or an alloy comprising at least one of titanium (Ti), zirconium (Zr), chrome (Cr), gold (Au) or tungsten (W). ### Claim 7 A light emitting device, comprising: a second electrode layer comprising a projection part, wherein the second electrode layer has a first portion, a second portion of the projection part, and a third portion; a first current blocking structure on the second electrode layer, wherein the current blocking structure has a first current blocking part and a second current blocking part; a second conductive type semiconductor layer on the first portion of the second electrode layer and the current blocking structure; an active layer on the second conductive type semiconductor layer; a first conductive type semiconductor layer on the active layer; and a first electrode layer on the first conductive type semiconductor layer, at least a portion of the first electrode layer corresponding with the first current blocking part in a vertical direction, wherein at least one portion of the first current blocking part overlaps the projection part in a vertical direction and the second current blocking part is disposed on the third portion of the second electrode layer. ### Claim 8 (depends on 7) The light emitting device according to claim 7, wherein the first current blocking part is disposed on a central portion of the second electrode layer, and the second current blocking part is disposed on a peripheral portion of the second electrode layer. ### Claim 9 (depends on 7) The light emitting device according to claim 7, wherein the first portion has a flat surface and the second portion of the projection part has inclined surfaces and the third portion has a recess part. ### Claim 10 (depends on 9) The light emitting device according to claim 9, wherein at least one portion of the second current blocking part is disposed in the recess part of the third portion. ### Claim 11 (depends on 7) The light emitting device according to claim 7, wherein the surface of the second current blocking part is coplanar with the second surface of the second electrode layer. ### Claim 12 (depends on 7) The light emitting device according to claim 7, wherein the first current blocking part has a substantially triangular shape. ### Claim 13 (depends on 7) The light emitting device according to claim 7, wherein the first and second current blocking part are formed of at least one of titanium (Ti), zirconium (Zr), chrome (Cr), gold (Au) or tungsten (W), or an alloy comprising at least one of titanium (Ti), zirconium (Zr), chrome (Cr), gold (Au) or tungsten (W). ### Claim 14 (depends on 7) The light emitting device according to claim 7, wherein the first and second current blocking part form a schottky contact with the second conductive type semiconductor layer, and the second electrode layer forms an ohmic contact with the second conductive type semiconductor layer. ### Claim 15 A light emitting device, comprising: a second electrode layer comprising a first projection part and a second projection part; a current blocking layer on the first projection part of the second electrode layer; a second conductive type semiconductor layer on the second electrode layer and the current blocking layer; an active layer on the second conductive type semiconductor layer; a first conductive type semiconductor layer on the active layer; and a first electrode layer on the first conductive type semiconductor layer, at least a portion of the first electrode layer corresponding with the first projection part in a vertical direction, wherein the second projection part is disposed on a peripheral portion of the second electrode layer and is spaced from the first projection part. ### Claim 16 (depends on 15) The light emitting device according to claim 15, wherein the second electrode layer has a flat surface and inclined surfaces. ### Claim 17 (depends on 16) The light emitting device according to claim 16, wherein the inclined surfaces meet the first surface of the second electrode layer. ### Claim 18 (depends on 15) The light emitting device according to claim 15, wherein the first projection part is disposed at a central portion of the second electrode layer. ### Claim 19 (depends on 15) The light emitting device according to claim 15, wherein the current blocking layer has a substantially triangular shape. ### Claim 20 (depends on 1) The light emitting device according to claim 1, wherein the second conductive type semiconductor layer is a p-type semiconductor layer, and the first conductive type semiconductor layer is an n-type semiconductor layer.