# US 8,569,776 B2 · Nitride-based semiconductor light-emitting device and manufacturing method thereof

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- Number: US 8,569,776 B2
- Document ID: US8569776B2
- Status: Granted
- Kind: B2
- Application number: 12/431,431
- Filed: 2009-04-28
- Published: 2009-08-27
- Granted: 2013-10-29
- Earliest claimed: 2002-04-17
- Assignees: Sharp Kabushiki Kaisha
- Applicants: Mayuko Fudeta; Toshio Hata
- Inventors: Mayuko Fudeta; Toshio Hata
- Web page: https://patentgrep.com/patent/US8569776B2

## CPC

- H10H 20/833: Transparent materials
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 20/821: of the light-emitting regions, e.g. non-planar junctions
- H10H 20/831: characterised by their shape
- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A nitride-based semiconductor light-emitting device and a manufacturing method thereof are provided. The nitride-based light-emitting device includes a first conductivity type nitride-based semiconductor layer, a light-emitting layer and a second conductivity type nitride-based semiconductor layer, that are successively layered above a translucent base. A first conductivity type electrode layer is electrically connected to the first conductivity type nitride-based semiconductor layer, and a second conductivity type electrode layer is electrically connected to the second conductivity type nitride-based semiconductor layer.

## Claims

### Claim 1

A nitride-based semiconductor light-emitting device comprising:
a translucent base;
a first conductivity type electrode layer comprising at least one of a metal thin-film layer and a transparent conductive layer;
a first conductivity type nitride-based semiconductor layer;
a light-emitting layer; and
a second conductivity type nitride-based semiconductor layer, wherein
the translucent base, the first conductivity type electrode layer, the first conductivity type nitride-based semiconductor layer, the light-emitting layer, and the second conductivity type nitride-based semiconductor layer are successively layered in this order,
the translucent base has a thickness of approximately 100 μm,
a thick-film layer is embedded in said translucent base, and
said translucent base is composed of a translucent resin.

### Claim 2 (depends on 1)

The nitride-based semiconductor light-emitting device according to claim 1, wherein said thick-film layer is composed of a plated layer.

### Claim 3 (depends on 1)

The nitride-based semiconductor light-emitting device according to claim 1, wherein said thick-film layer is composed of a metal bump.