# US 8,569,775 B2 · Light-emitting diode (LED) array

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- Number: US 8,569,775 B2
- Document ID: US8569775B2
- Status: Granted
- Kind: B2
- Application number: 13/428,974
- Filed: 2012-03-23
- Published: 2012-09-27
- Granted: 2013-10-29
- Earliest claimed: 2011-03-23
- Assignees: Epistar Corporation
- Applicants: Li-Ping Jou; Yu-Chen Yang; Jui-Hung Yeh
- Inventors: Li-Ping Jou; Yu-Chen Yang; Jui-Hung Yeh
- Web page: https://patentgrep.com/patent/US8569775B2

## CPC

- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10H 20/83: Electrodes
- H10H 20/8312: {extending at least partially through the bodies}
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 29/14: comprising multiple light-emitting semiconductor components
- H10H 20/032: {of electrodes}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.

## Claims

### Claim 1

A light-emitting diode array having a first area, a third area, and a second area comprising:
a permanent substrate;
a bonding layer on the permanent substrate;
a second conductive layer on the bonding layer;
a second isolation layer on the second conductive layer;
a crossover metal layer on the second isolation layer;
a first isolation layer on the crossover metal layer;
a conductive connecting layer on the first isolation layer except the third area;
an epitaxial structure on the conductive connecting layer, wherein the epitaxial structure further comprises a rough surface; and
a first electrode layer on the epitaxy structure.

### Claim 2 (depends on 1)

The light-emitting diode array of claim 1, wherein the array comprises a first light-emitting diode unit, a second light-emitting diode unit in sequence to a (N−1)th light-emitting diode unit, a Nth light-emitting diode unit, and multiple pathways among the N light-emitting diode, wherein N is not less than three; wherein the first light-emitting diode unit locates in the first area, the Nth light-emitting diode unit locates in the third area, and the second light-emitting diode unit in sequence to the (N−1)th light-emitting diode unit locate in the second area located between the first area and the third area, wherein the N light-emitting diode units are electrically connected to each other by the crossover metal layer in series.

### Claim 3 (depends on 1)

The light-emitting diode array of claim 1, wherein the epitaxial structure comprising:
a second conductive semiconductor layer;
an active layer on the second conductive semiconductor layer;
a first conductive semiconductor layer on the active layer; and
a plurality of trenches, wherein the trenches extend from the second conductive semiconductor layer to the first conductive semiconductor layer except in the third area.

### Claim 4 (depends on 3)

The light-emitting diode array of claim 3, wherein the first isolation layer locates on the side wall of the trenches and the crossover metal layer extends into the trenches.

### Claim 5 (depends on 1)

The light-emitting diode array of claim 1, wherein the conductive connecting layer in the third area locates between the epitaxial structure and a part of the crossover metal layer, and the conductive connecting layer in the first area locates between the epitaxial structure and the second conductive layer.

### Claim 6 (depends on 1)

The light-emitting diode array of claim 1 further comprising:
a conductive region located on the conductive connecting layer in the second area and is not covered by the first isolation layer; and
an electrical isolation region not covered by the crossover metal layer and is adjacent to the conductive region.

### Claim 7 (depends on 3)

The light-emitting diode array of claim 3, wherein the crossover metal layer is electrically isolated from the second conductive semiconductor layer by the first isolation layer.