# US 8,569,766 B2 · Organic light-emitting display device and method of manufacturing the same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,569,766 B2
- Document ID: US8569766B2
- Status: Granted
- Kind: B2
- Application number: 13/177,899
- Filed: 2011-07-07
- Published: 2012-10-11
- Granted: 2013-10-29
- Earliest claimed: 2011-04-05
- Assignees: Samsung Display Co., Ltd.
- Applicants: Sun Park; Chun-Gi You; June-Woo Lee
- Inventors: Sun Park; Chun-Gi You; June-Woo Lee
- Web page: https://patentgrep.com/patent/US8569766B2

## CPC

- H10K 59/131: Interconnections, e.g. wiring lines or terminals
- H10K 59/1213: {the pixel elements being TFTs}
- H10K 59/1216: {the pixel elements being capacitors}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

Disclosed is an organic light-emitting display device including a transparent substrate which includes a display portion and a pad portion formed in a region around the display portion, a first semiconductor layer formed on the display portion, a second semiconductor layer formed on the pad portion, and a transparent electrode formed on each of the first the second semiconductor layers, where the first and second semiconductor layers include the same material.

## Claims

### Claim 1

An organic light-emitting display device comprising:
a transparent substrate comprising a display portion and a pad portion, wherein the pad portion is formed in a region around the display portion;
a first semiconductor layer formed on the display portion;
a second semiconductor layer formed on the pad portion; and
a transparent electrode formed on each of the first semiconductor layer and the second semiconductor layer,
wherein the first semiconductor layer and the second semiconductor layer comprise the same material.

### Claim 2 (depends on 1)

The display device of claim 1, further comprising a pixel defined layer formed on the display portion and the pad portion, wherein the pixel defined layer is configured to define the display portion and the pad portion, and to expose the transparent electrode formed on the second semiconductor layer.

### Claim 3 (depends on 1)

The display device of claim 1, further comprising a drive circuit board, wherein the drive circuit board comprises:
a plurality of circuit wirings formed on a surface of the drive circuit board;
a connection portion formed on a side of the drive circuit board, wherein the connection portion is configured to contact the transparent electrode; and
wherein the drive circuit board transmits a driving signal to the transparent electrode.

### Claim 4 (depends on 3)

The display device of claim 3, wherein a conductive adhesive layer comprising a plurality of conductive balls is interposed between the transparent electrode and the connection portion.

### Claim 5 (depends on 3)

The display device of claim 3, wherein the transparent electrode and the connection portion are pressed against each other to form indentation impressions on the transparent electrode formed on the second semiconductor layer.

### Claim 6 (depends on 5)

The display device of claim 5, wherein the second semiconductor layer comprises protrusions and recesses formed by the indentation impressions formed on the transparent electrode.

### Claim 7 (depends on 1)

The display device of claim 1, wherein each of the first and second semiconductor layers comprises polycrystalline silicon.

### Claim 8 (depends on 1)

The display device of claim 1, wherein each of the first and second semiconductor layer has a light reflectivity of about 40% or more.

### Claim 9 (depends on 1)

The display device of claim 1, further comprising source and drain electrodes disposed on the display portion and connected to the first semiconductor layer, wherein each of the source and drain electrodes comprises at least one of molybdenum, titanium and aluminum.

### Claim 10 (depends on 1)

The display device of claim 1, further comprising a gate electrode formed on the transparent electrode formed on the first semiconductor layer, wherein the gate electrode comprises at least one of molybdenum, titanium and aluminum.
