# US 8,569,761 B2 · Organic light emitting display device

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- Number: US 8,569,761 B2
- Document ID: US8569761B2
- Status: Granted
- Kind: B2
- Application number: 13/162,455
- Filed: 2011-06-16
- Published: 2012-01-19
- Granted: 2013-10-29
- Earliest claimed: 2010-07-14
- Assignees: Samsung Display Co., Ltd.
- Applicants: Soo-Beom Jo; Sung-Won Doh
- Inventors: Soo-Beom Jo; Sung-Won Doh
- Web page: https://patentgrep.com/patent/US8569761B2

## CPC

- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- H10K 59/124: Insulating layers formed between TFT elements and OLED elements
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

An organic light emitting display device capable of preventing outgassing from a pixel defining layer (PDL) or a planarization layer and method of manufacturing the same.

## Claims

### Claim 1

An organic light emitting display device comprising:
a substrate;
a pixel circuit on the substrate;
a pixel electrode electrically coupled to the pixel circuit;
a pixel defining layer (PDL) exposing the pixel electrode;
an intermediate layer on the pixel electrode, the intermediate layer being configured to radiate light;
a first ion injected layer comprising organic material and located on the PDL; and
a second ion injected layer comprising organic material and located between the pixel electrode and the substrate,
wherein the first ion injected layer and the second ion injected layer comprise ions BHx+or PH+,
wherein the second ion injected layer directly contacts the PDL and overlaps with the first ion injected layer, and
wherein a side surface of the pixel electrode is not covered by the second ion injected layer.

### Claim 2 (depends on 1)

The organic light emitting display device of claim 1, wherein the PDL comprises an organic material, and the first ion injected layer prevents gas from being discharged from the PDL.

### Claim 3 (depends on 1)

The organic light emitting display device of claim 1, wherein a thickness of the second ion injected layer is in a range of 2000 Å to 3000 Å.

### Claim 4 (depends on 1)

The organic light emitting display device of claim 1, wherein the pixel circuit comprises a thin film transistor (TFT).

### Claim 5 (depends on 1)

The organic light emitting display device of claim 1, wherein the first ion injected layer is formed by injecting the ions into the PDL.

### Claim 6 (depends on 5)

The organic light emitting display device of claim 5, wherein the first ion injected layer is formed by hardening the PDL at 200° C. and then the injecting of the ions into the PDL.

### Claim 7 (depends on 5)

The organic light emitting display device of claim 5, wherein a thickness of the first ion injected layer is in a range of 2000 Å to 3000 Å.

### Claim 8 (depends on 1)

The organic light emitting display device of claim 1, further comprising a planarization layer between the pixel electrode and the pixel circuit and covering the pixel circuit.

### Claim 9 (depends on 8)

The organic light emitting display device of claim 8, wherein the planarization layer has a contact hole for connection between the pixel electrode and the pixel circuit.

### Claim 10 (depends on 8)

The organic light emitting display device of claim 8, wherein the second ion injected layer prevents gas from being discharged from the planarization layer.

### Claim 11 (depends on 8)

The organic light emitting display device of claim 8, wherein the second ion injected layer is formed by injecting the ions into the planarization layer.

### Claim 12 (depends on 11)

The organic light emitting display device of claim 11, wherein the second ion injected layer is formed by hardening the PDL at 200° C. and then the injecting of the ions into the planarization layer.

### Claim 13

A method of manufacturing an organic light emitting display device, the method comprising:
forming a pixel circuit on a substrate;
forming a passivation layer on the pixel circuit;
forming a planarization layer on the passivation layer;
forming a pixel electrode on the planarization layer and electrically coupled to the pixel circuit;
forming an intermediate layer on the pixel electrode, the intermediate layer being configured to radiate light;
forming a pixel defining layer (PDL) on the planarization layer so as to expose the pixel electrode;
forming a first ion injected layer comprising organic material and located on the PDL; and
forming a second ion injected layer comprising organic material and located between the pixel electrode and the substrate,
wherein the first ion injected layer and the second ion injected layer comprise ions BHx+or PH+,
wherein the second ion injected layer directly contacts the PDL and overlaps with the first ion injected layer, and
wherein a side surface of the pixel electrode is not covered by the second ion injected layer.

### Claim 14 (depends on 13)

The method of claim 13, wherein a thickness of the second ion injected layer is in a range of 2000 Å to 3000 Å.

### Claim 15 (depends on 13)

The method of claim 13, wherein the forming of the second ion injected layer comprises:
hardening the planarization layer; and
injecting the ions into the planarization layer.

### Claim 16 (depends on 15)

The method of claim 15, wherein the injecting of the ions comprises forming the second ion injected layer by the injecting of the ions into a surface of the planarization layer.

### Claim 17 (depends on 15)

The method of claim 15, wherein the hardening of the planarization layer comprises heating the planarization layer at 200° C.

### Claim 18 (depends on 13)

The method of claim 13, wherein the forming of the first ion injected layer comprises:
hardening the PDL; and
injecting the ions into the PDL.

### Claim 19 (depends on 18)

The method of claim 18, wherein the hardening of the PDL comprises heating the PDL at 200° C.

### Claim 20 (depends on 18)

The method of claim 18, wherein the injecting of the ions comprises forming the first ion injected layer by the injecting of the ions into a surface of the PDL.

### Claim 21 (depends on 20)

The method of claim 20, wherein a thickness of the first ion injected layer is in a range of 2000 Å to 3000 Å.