# US 8,569,756 B2 · Alkylsilane laminate, production method thereof and thin-film transistor

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- Number: US 8,569,756 B2
- Document ID: US8569756B2
- Status: Granted
- Kind: B2
- Application number: 13/322,830
- Filed: 2010-05-27
- Published: 2012-04-05
- Granted: 2013-10-29
- Earliest claimed: 2009-05-28
- Assignees: Teijin Limited
- Applicants: Takashi Kushida; Hiroyoshi Naito
- Inventors: Takashi Kushida; Hiroyoshi Naito
- Web page: https://patentgrep.com/patent/US8569756B2

## Abstract

Provided is an alkylsilane laminate with which it is possible to obtain an organic semiconductor film having excellent semiconductor properties. Such a laminate can be useful for an organic thin-film transistor. The alkylsilane laminate comprises an underlayer (Sub) having hydroxyl groups at the surface and an alkylsilane thin film (AS) formed on this underlayer. The alkylsilane laminate is a laminate wherein the critical surface energy Ec of the alkylsilane thin film and the number of carbons (X) of the alkylsilane satisfies the following formula (1): Ec≦29.00−0.63x (mN/m) (1) Also provided is a thin-film transistor (10) having such an alkylsilane laminate (Sub, AS).

## Claims

### Claim 1

A thin-film transistor, having, on one surface of a substrate, a source electrode, a drain electrode, a gate electrode, a gate insulating film and an organic semiconductor film, said source electrode and said drain electrode being insulated from said gate electrode by said gate insulating film, and the current flowing from said source electrode to said drain electrode through said organic semiconductor being controlled by the voltage applied to said gate electrode,
wherein said thin-film transistor further has an alkylsilane thin film, said substrate or gate insulating film has hydroxyl groups on the surface thereof, said alkylsilane thin film is formed on said substrate or gate insulating film having hydroxyl groups on the surface thereof, and the critical surface energy Ec of said alkylsilane thin film and the carbon number x of the alkylsilane satisfy the following formula (1):
Ec≦29.00−0.63x (mN/m) (1);
wherein said alkylsilane thin film is made of a trichloroalkylsilane or a trialkoxyalkylsilane as a raw material.

### Claim 2 (depends on 1)

The thin-film transistor according to claim 1, wherein the average thickness of said alkylsilane thin film is 10 nm or less.

### Claim 3 (depends on 1)

The thin-film transistor according to claim 1, wherein the roughness Ra of said alkylsilane thin film is 1 nm or less.

### Claim 4 (depends on 1)

The thin-film transistor according to claim 1, wherein said alkylsilane thin film contains a siloxane oligomer.

### Claim 5 (depends on 1)

The thin-film transistor according to claim 1, wherein said alkylsilane is a linear alkylsilane.

### Claim 6 (depends on 1)

The thin-film transistor according to claim 1, wherein the hydroxyl group-containing surface is provided by silica.

### Claim 7 (depends on 1)

The thin-film transistor according to claim 1, wherein the hydroxyl group-containing surface is provided by a silica layer stacked on a polymer substrate.

### Claim 8 (depends on 1)

The thin-film transistor according to claim 1, wherein the carbon number of said alkylsilane is 10 or more.

### Claim 9 (depends on 1)

A method for producing the thin-film transistor according to claim 1, comprising forming said alkylsilane thin film on said substrate or gate insulating film by a contact printing method in an atmosphere with a humidity of 5% or less.

### Claim 10 (depends on 2)

The laminate thin-film transistor according to claim 2, wherein the roughness Ra of said alkylsilane thin film is 1 nm or less.