# US 8,569,745 B2 · Semiconductor device and display apparatus

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,569,745 B2
- Document ID: US8569745B2
- Status: Granted
- Kind: B2
- Application number: 12/920,723
- Filed: 2009-01-08
- Published: 2011-01-20
- Granted: 2013-10-29
- Earliest claimed: 2008-03-17
- Assignees: Sony Corporation
- Applicants: Nobuhide Yoneya
- Inventors: Nobuhide Yoneya
- Web page: https://patentgrep.com/patent/US8569745B2

## CPC

- H10K 10/80: Constructional details
- H10K 10/466: {Lateral bottom-gate IGFETs comprising only a single gate}
- H10K 10/88: Passivation; Containers; Encapsulations
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A semiconductor device includes an organic semiconductor layer, and a protective film. The protective film covers a side wall of the organic semiconductor layer. An insulating partition wall is disposed on the substrate. The partition wall includes an opening. The organic semiconductor layer includes a first portion that is disposed within the opening of the partition wall. The protective film fills the inside of the opening of the partition wall.

## Claims

### Claim 1

A semiconductor device comprising:
an organic semiconductor layer including a first portion and a second portion on a substrate;
an insulating partition wall on said substrate and having an opening;
a protective film on the substrate and covering surfaces of the organic semiconductor layer including a side wall of the first portion of the organic semiconductor layer; and
an interlayer insulating film covering said protective film,
wherein,
the first portion is within the opening of the insulating partition wall,
the second portion is disposed on the partition wall, and
the interlayer insulating film is in contact with a side wall of the second portion.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein:
the organic semiconductor layer is disposed on the bottom of the opening of the partition wall; and
the protective film fills the inside of the opening of the partition wall.

### Claim 3 (depends on 2)

The semiconductor device according to claim 2, wherein a circumferential edge portion of the protective film is disposed on the partition wall.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3, wherein the second portion of the organic semiconductor layer has a same shape as the protective film on the partition wall.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a source electrode and a drain electrode under the protective film, the source electrode and the drain electrode having ends that are connected to the organic semiconductor layer; and
a gate electrode having a region that overlaps a laminated portion of the organic semiconductor layer and the protective film.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, comprising a gate insulating film which covers a gate electrode on the substrate, and has an opening within which the first portion of the organic semiconductor layer is disposed.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein the interlayer insulating film is composed of a photosensitive resist material.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, wherein a conductive pattern is disposed on the interlayer insulating film.

### Claim 9 (depends on 1)

The semiconductor device according to claim 1, wherein the protective film is composed of a fluorine-based resin, a water-soluble resin, or a poly(para-xylylene) derivative.

### Claim 10

A display comprising:
a gate electrode disposed on a substrate;
a gate-insulating film which covers the gate electrode;
a source electrode and a drain electrode disposed on the gate-insulating film;
an insulating partition wall disposed on the gate-insulating film, the insulating partition wall having an opening which extends to the gate-insulating film between the source electrode and the drain electrode;
an organic semiconductor layer having a first portion and a second portion, the first portion being disposed above the gate electrode at the bottom of the opening of the partition wall and the second portion being disposed on the partition wall;
a protective film covering a side wall of the first portion of the organic semiconductor layer and filling an inside of the opening of the partition wall;
an interlayer insulating film on the protective film and the partition wall, the interlayer insulating film being in contact with a side wall of the second portion; and
a pixel electrode disposed on the interlayer insulating film and connected to the source electrode or the drain electrode through a connecting hole formed in the interlayer insulating film and the partition wall.

### Claim 11

A display comprising:
a source electrode and a drain electrode disposed on a substrate;
an insulating partition wall disposed on the substrate, the insulating partition wall having an opening which extends to the substrate between the source electrode and the drain electrode;
an organic semiconductor layer having a first portion disposed between the source electrode and the drain electrode at the bottom of the opening of the partition wall;
a protective film covering a side wall of the first portion of the organic semiconductor layer and filling the inside of the opening of the partition wall;
an insulating film on the protective film and the partition wall;
a gate electrode disposed on the insulating film and overlapping the organic semiconductor layer;
an interlayer insulating film which covers the insulating film and the gate electrode; and
a pixel electrode disposed on the interlayer insulating film and connected to the source electrode or the drain electrode through a connecting hole formed in the interlayer insulating film and the partition wall.