# US 8,569,743 B2 · Light-emitting component

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- Number: US 8,569,743 B2
- Document ID: US8569743B2
- Status: Granted
- Kind: B2
- Application number: 12/297,506
- Filed: 2007-04-13
- Published: 2010-03-18
- Granted: 2013-10-29
- Earliest claimed: 2006-04-19
- Assignees: Novaled GmbH
- Applicants: Jan Birnstock; Jan Blochwitz-Nimoth
- Inventors: Jan Birnstock; Jan Blochwitz-Nimoth
- Web page: https://patentgrep.com/patent/US8569743B2

## CPC

- H10K 85/611: {Charge transfer complexes}
- H10K 50/17: Carrier injection layers
- H10K 85/341: {Transition metal complexes, e.g. Ru(II)polypyridine complexes (H10K85/331 takes precedence)}
- H10K 50/155: comprising dopants
- H10K 50/165: comprising dopants
- H10K 50/171: {Electron injection layers}
- H10K 50/18: Carrier blocking layers
- H10K 85/1135: {Polyethylene dioxythiophene [PEDOT]; Derivatives thereof}
- H10K 85/114: {Poly-phenylenevinylene; Derivatives thereof}
- H10K 85/30: Coordination compounds
- H10K 85/321: {Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]}
- H10K 85/342: {comprising iridium}
- H10K 2101/50: Oxidation-reduction potentials, e.g. excited state redox potentials
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

The invention relates to a light-emitting device, in particular a light-emitting diode, with an arrangement of layers on a substrate, wherein the arrangement of layers has an anode contact and a cathode contact which are in electrical contact with a light-emitting layer stack arranged between the anode contact and the cathode contact which, on its part, comprises a polymer layer consisting of a polymer material and a low-molecular layer of vacuum-deposited small molecules of an organic material, and wherein the small molecules of the low-molecular layer are formed as donor molecules with an oxidation potential versus Fc/Fc+ (ferrocene/ferrocenium redox couple) of maximum approx. −1.5 V, if the low-molecular layer is arranged adjacent to the cathode contact, and as acceptor molecules with a reduction potential versus Fc/Fc+ (ferrocene/ferrocenium redox couple) of minimum approx. −0.3 V if the low-molecular layer is arranged adjacent to the anode contact.

## Claims

### Claim 1

A light-emitting device comprising an arrangement of layers on a substrate, wherein the arrangement of layers comprises an anode contact and a cathode contact which are in electrical contact with a light-emitting layer stack, wherein the light-emitting layer stack is arranged between the anode contact and the cathode contact, and the light-emitting layer stack comprises a polymer layer comprising a polymer material, and a first low-molecular layer of vacuum-deposited small molecules of a first organic material that is depositable by means of vacuum evaporation, wherein the first low-molecular layer is arranged adjacent to the cathode contact or the anode contact, and wherein the small molecules of the first low-molecular layer are:
donor molecules with a maximum oxidation potential versus Fc/Fc+ (ferrocene/ferrocenium redox couple) of approximately −1.5 V, if the first low-molecular layer is arranged adjacent to the cathode contact, or
acceptor molecules with a minimum reduction potential versus Fc/Fc+ (ferrocene/ferrocenium redox couple) of approximately −0.3 V, if the first low-molecular layer is arranged adjacent to the anode contact.

### Claim 2 (depends on 1)

The device according to claim 1, wherein the light-emitting layer comprises a second low-molecular layer comprising vacuum-deposited small molecules of a second organic material that is separable by means of vacuum evaporation which is different from the first organic material, wherein the small molecules of the second low-molecular layer comprise:
acceptor molecules with a maximum oxidation potential versus Fc/Fc+ (ferrocene/ferrocenium redox couple) of approximately −1.5 V, if the second low-molecular layer is arranged adjacent to the anode contact and the first low-molecular layer is arranged adjacent to the cathode contact, or
donor molecules with a minimum reduction potential versus Fc/Fc+ (ferrocene/ferrocenium redox couple) of approximately −0.3 V, if the second low-molecular layer is arranged adjacent to the cathode contact and the first low-molecular layer is arranged adjacent to the anode contact.

### Claim 3 (depends on 1)

The device according to claim 1, wherein the donor molecules have a maximum oxidation potential versus Fc/Fc+ (ferrocene/ferrocenium redox couple) of approximately −2.0 V.

### Claim 4 (depends on 1)

The device according to claim 1, wherein the acceptor molecules have a minimum reduction potential versus Fc/Fc+ (ferrocene/ferrocenium redox couple) of approximately 0 V.

### Claim 5 (depends on 1)

The device according to claim 1, wherein the donor molecules or the acceptor molecules have a molar mass between approximately 100 g/mol and approximately 2000 g/mol.

### Claim 6 (depends on 1)

The device according to claim 1, wherein the donor molecules comprise (tetrakis(1,2,3,3a,4,5,6,6a,7,8-decahydro-1,9,9b-triazaphenalenyl)ditungsten(II).

### Claim 7 (depends on 1)

The device according to claim 1, wherein the acceptor molecules comprise (N,N′-dicyano-2,3,5,6-tetrachloro-1,4-quinonediimine).

### Claim 8 (depends on 2)

The device according to claim 2, wherein the first low-molecular or the second low-molecular layer have a layer thickness between approximately 0.5 nm and approximately 20 nm.

### Claim 9 (depends on 1)

The device according to claim 1, wherein the polymer layer is a light-emitting and charge carrier transporting layer.

### Claim 10 (depends on 1)

The device according to claim 1, wherein the polymer layer has a layer thickness between approximately 20 nm and approximately 500 nm.

### Claim 11 (depends on 1)

The device according to claim 1, wherein the polymer layer comprises a polymer material selected from the following group of polymer materials: polyfluorenes, poly(p-phenylene vinylene), polyspiros, polythiophenes, or polyparaphenylenes.

### Claim 12 (depends on 1)

The device according to claim 1, wherein a polymer hole injection layer is arranged between the anode contact and the polymer layer, if the first low-molecular layer is arranged adjacent to the cathode contact.

### Claim 13 (depends on 12)

The device according to claim 12, wherein the polymer hole injection layer has a layer thickness between approximately 50 nm and approximately 100 nm.

### Claim 14 (depends on 1)

The device according to claim 1, wherein a low-molecular organic electron transport layer is arranged between the first low-molecular layer and the polymer layer, if the first low-molecular layer is arranged adjacent to the cathode contact.

### Claim 15 (depends on 14)

The device according to claim 14, wherein the low-molecular organic electron transport layer comprises an organic matrix material which is electrically doped with a low-molecular organic donor material.

### Claim 16 (depends on 15)

The device according to claim 15, wherein the low-molecular organic electron transport layer has a doping concentration (donor material molecules:matrix material molecules) between 1:1000 and 1:2.

### Claim 17 (depends on 15)

The device according to claim 15, wherein the organic donor material has a molar mass between approximately 100 g/mol and approximately 2000 g/mol.

### Claim 18 (depends on 14)

The device according to claim 14, wherein the low-molecular organic electron transport layer has a layer thickness between approximately 10 nm and approximately 500 nm.

### Claim 19 (depends on 15)

The device according to claim 15, wherein the low-molecular organic donor material comprises (tetrakis(1,2,3,3a,4,5,6,6a,7,8-decahydro-1,9,9b-triazaphenalenyl)ditungsten(II).

### Claim 20 (depends on 1)

The device according claim 1, wherein a low-molecular organic blocking layer is arranged between the first low-molecular layer and the polymer layer, if the first low-molecular layer is arranged adjacent to the cathode contact.

### Claim 21 (depends on 20)

The device according to claim 20, wherein the low-molecular organic blocking layer has a layer thickness between approximately 2 nm and approximately 50 nm.

### Claim 22 (depends on 1)

The device according to claim 1, wherein a polymer electron injection layer is arranged between the cathode contact and the polymer layer, if the first low-molecular layer is arranged adjacent to the anode contact.

### Claim 23 (depends on 22)

The device according to claim 22, wherein the polymer electron injection layer has a layer thickness between approximately 50 nm and approximately 100 nm.

### Claim 24 (depends on 1)

The device according to claim 1, wherein a low-molecular organic hole transport layer is arranged between the first low-molecular layer and the polymer layer, if the first low-molecular layer is arranged adjacent to the anode contact.

### Claim 25 (depends on 24)

The device according to claim 24, wherein the low-molecular organic hole transport layer comprises an organic matrix material which is electrically doped with a low-molecular organic acceptor material.

### Claim 26 (depends on 25)

The device according to claim 25, wherein the low-molecular organic hole transport layer has a doping concentration (acceptor material molecules:matrix material molecules) between 1:1000 and 1:2.

### Claim 27 (depends on 25)

The device according to claim 25, wherein the organic acceptor material has a molar mass between approximately 200 g/mol and approximately 1000 g/mol.

### Claim 28 (depends on 24)

The device according to claim 24, wherein the low-molecular organic hole transport layer has a layer thickness between approximately 10 nm and approximately 500 nm.

### Claim 29 (depends on 25)

The device according to claim 25, wherein the low-molecular organic acceptor material is (N,N′-dicyano-2,3,5,6-tetrachloro-1,4-quinonediimine).

### Claim 30 (depends on 1)

The device according to claim 1, wherein a low-molecular organic blocking layer is arranged between the first low-molecular layer and the polymer layer, if the first low-molecular layer is arranged adjacent to the anode contact.

### Claim 31 (depends on 30)

The device according to claim 30, wherein the low-molecular organic blocking layer has a layer thickness between approximately 2 nm and approximately 50 nm.

### Claim 32 (depends on 1)

The device according to claim 1, wherein the arrangement of layers is arranged according to at least one configuration selected from the following group of configurations: inverted configuration; non-inverted configuration; configuration having light which is generated in the light-emitting layer stack emitting away from the substrate (“top-emission”); or configuration having light which is generated in the light-emitting layer stack emitting through the substrate (“bottom emission”).

### Claim 33 (depends on 1)

The device according to claim 1, wherein the arrangement of layers and the substrate is transparent.

### Claim 34 (depends on 1)

The device according to claim 1, wherein the anode contact or the cathode contact comprise: one or several metals, a combination of a metal and a degenerate semiconductor material, or a metal alloy.