# US 8,569,736 B2 · Light emitting diode

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- Number: US 8,569,736 B2
- Document ID: US8569736B2
- Status: Granted
- Kind: B2
- Application number: 13/288,203
- Filed: 2011-11-03
- Published: 2012-11-01
- Granted: 2013-10-29
- Earliest claimed: 2011-04-29
- Assignees: Tsinghua University; Hon Hai Precision Industry Co., Ltd.
- Applicants: Yang Wei; Shou-Shan Fan
- Inventors: Yang Wei; Shou-Shan Fan
- Web page: https://patentgrep.com/patent/US8569736B2

## CPC

- H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10H 20/832: characterised by their material
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/032: {of electrodes}
- H10H 20/81: Bodies
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/8312: {extending at least partially through the bodies}
- H10H 20/833: Transparent materials
- H10H 20/8581: {characterised by their material}
- Y10S 977/95: Electromagnetic energy
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes.

## Claims

### Claim 1

A light emitting diode comprising:
a first semiconductor layer;
an active layer stacked on the first semiconductor layer;
a second semiconductor layer stacked on the active layer;
a first electrode electrically connected to the first semiconductor layer;
a second electrode electrically connected to the second semiconductor layer; and
a carbon nanotube layer enclosed in an interior of the first semiconductor layer; wherein the carbon nanotube layer is a free-standing structure comprising a plurality of carbon nanotubes.

### Claim 2 (depends on 1)

The light emitting diode as claimed in claim 1, wherein the first semiconductor layer is a continuous structure.

### Claim 3 (depends on 1)

The light emitting diode as claimed in claim 1, wherein a plurality of channels is formed in the interior of the first semiconductor layer, and the carbon nanotubes are located in the channels.

### Claim 4 (depends on 3)

The light emitting diode as claimed in claim 3, wherein a diameter of a cross-section of each of the channels is in a range from about 2 nm to about 200 nm.

### Claim 5 (depends on 3)

The light emitting diode as claimed in claim 3, wherein a single carbon nanotube or a carbon nanotube bundle comprising a plurality of carbon nanotubes is located in each of the channels.

### Claim 6 (depends on 3)

The light emitting diode claimed in as claim 3, wherein the carbon nanotube layer defines a plurality of apertures.

### Claim 7 (depends on 6)

The light emitting diode as claimed in claim 6, wherein the first semiconductor layer permeates through the apertures of the carbon nanotube layer and encloses the carbon nanotubes therein.

### Claim 8 (depends on 7)

The light emitting diode as claimed in claim 7, wherein the carbon nanotube layer comprises a carbon nanotube film or a plurality of carbon nanotube wires substantially parallel to and spaced from each other, the carbon nanotube film comprises a plurality of carbon nanotubes, and axial directions of the carbon nanotubes are oriented along one direction.

### Claim 9 (depends on 8)

The light emitting diode as claimed in claim 8, wherein the channels are strip-shaped.

### Claim 10 (depends on 9)

The light emitting diode as claimed in claim 9, wherein the channels in the first semiconductor layer are substantially parallel to and spaced from each other.

### Claim 11 (depends on 7)

The light emitting diode as claimed in claim 7, wherein the carbon nanotube layer comprises a plurality of cross-stacked carbon nanotube films or a plurality of carbon nanotube wires crossed with each other or woven together.

### Claim 12 (depends on 11)

The light emitting diode as claimed in claim 11, wherein the channels are strip-shaped and crossed with each other.

### Claim 13 (depends on 12)

The light emitting diode as claimed in claim 12, wherein the channels in the first semiconductor layer form a channel network, and the channels are interconnected.