# US 8,569,730 B2 · Carbon-based interface layer for a memory device and methods of forming the same

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- Number: US 8,569,730 B2
- Document ID: US8569730B2
- Status: Granted
- Kind: B2
- Application number: 12/465,315
- Filed: 2009-05-13
- Published: 2010-01-14
- Granted: 2013-10-29
- Earliest claimed: 2008-07-08
- Assignees: SanDisk 3D LLC
- Applicants: Huiwen Xu; April D. Schricker; Er-Xuan Ping
- Inventors: Huiwen Xu; April D. Schricker; Er-Xuan Ping
- Web page: https://patentgrep.com/patent/US8569730B2

## CPC

- H10N 70/801: {Constructional details of multistable switching devices}
- H10B 63/20: {comprising selection components having two electrodes, e.g. diodes}
- H10B 63/84: {arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays}
- H10N 70/023: {by chemical vapor deposition, e.g. MOCVD, ALD}
- H10N 70/20: Multistable switching devices, e.g. memristors
- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- H10N 70/8845: {Carbon or carbides}
- H10K 10/50: Bistable switching devices
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/3406: {Carbon, e.g. diamond-like carbon}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B: ELECTRONIC MEMORY DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

In a first aspect, a memory cell is provided that includes (1) a first conductor; (2) a reversible resistance-switching element formed above the first conductor including (a) a carbon-based resistivity switching material; and (b) a carbon-based interface layer coupled to the carbon-based resistivity switching material; (3) a steering element formed above the first conductor; and (4) a second conductor formed above the reversible resistance-switching element and the steering element. Numerous other aspects are provided.

## Claims

### Claim 1

A memory cell comprising:
a first conductor;
a metal-insulator-metal (MIM) stack formed above the first conductor, the MIM stack including:
a bottom electrode;
a first carbon-based interface layer disposed on the bottom electrode;
a carbon-based resistivity switching material comprising carbon nanotubes formed on the first carbon-based interface layer;
a second carbon-based interface layer disposed on the carbon-based resistivity switching material; and
a top electrode disposed on the second carbon-based interface layer;
a steering element formed above the first conductor; and
a second conductor formed above the MIM stack and the steering element.

### Claim 2 (depends on 1)

The memory cell of claim 1, wherein the first carbon-based interface layer and/or the second carbon-based interface layer has an sp3 bond concentration greater than that of the carbon-based resistivity switching material.

### Claim 3 (depends on 1)

The memory cell of claim 1, wherein the first carbon-based interface layer and/or the second carbon-based interface layer has a density greater than that of the carbon-based resistivity switching material.

### Claim 4 (depends on 1)

The memory cell of claim 1, wherein the first carbon-based interface layer and/or the second carbon-based interface layer comprises nitridized carbon-based material.

### Claim 5 (depends on 1)

The memory cell of claim 1, wherein the first carbon-based interface layer and/or the second carbon-based interface layer has a thickness of about 500 angstroms or less.

### Claim 6 (depends on 1)

The memory cell of claim 1, wherein the first carbon-based interface layer and/or the second carbon-based interface layer comprises amorphous carbon.

### Claim 7 (depends on 1)

The memory cell of claim 1, wherein one or more of the first carbon-based interface layer and/or the second carbon-based interface layer and the carbon-based resistivity switching material comprises one or more of amorphous carbon containing graphene, graphene, and carbon nanotubes.

### Claim 8 (depends on 1)

The memory cell of claim 1 wherein the steering element comprises a vertical diode.