# US 8,569,716 B2 · Optoelectronic sensor system

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- Number: US 8,569,716 B2
- Document ID: US8569716B2
- Status: Granted
- Kind: B2
- Application number: 12/668,734
- Filed: 2007-07-12
- Published: 2010-12-09
- Granted: 2013-10-29
- Earliest claimed: 2007-07-12
- Assignees: ASMAG-Holding GmbH
- Applicants: Max Sonnleitner
- Inventors: Max Sonnleitner
- Web page: https://patentgrep.com/patent/US8569716B2

## CPC

- G01N 21/648: {using evanescent coupling or surface plasmon coupling for the excitation of fluorescence}
- G01N 21/6454: {using an integrated detector array}
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

The underlying objective is to create an optoelectronic sensor system which illuminates the specimen homogenously and only allows produced fluorescent light to reach the photoactive layer. The objective is achieved substantially by creating a total reflection layer for the introduced light before or above the optoelectronic sensor layer. This can be applied in all fields in which microarray biochips are used.

## Claims

### Claim 1

An optoelectronic sensor system for stimulating and detecting specimens, with a surface for the application of the specimens and an underlying layer system with a transparent first layer with a first refractive index, into which light can be introduced for stimulating the specimen, and an adjoining second layer with a second smaller refractive index for generating a total reflection of the introduced light and a resulting spreading planar lightwave in the first layer and an optoelectronic sensor layer lying under the second layer comprising one or more semiconductor layers between two electrode layers, of which the electrode layer facing the specimen is designed to be at least partly light permeable, further comprising two glass layers wherein the optoelectronic sensor layer is located between two glass layers.

### Claim 2 (depends on 1)

The optoelectronic sensor system according to claim 1, wherein on the first layer a prism or grid is arranged for introducing the light.

### Claim 3 (depends on 1)

The optoelectronic sensor system according to claim 1,
wherein the first layer is made of glass.

### Claim 4 (depends on 1)

The optoelectronic sensor system according to claim 1, wherein the first layer has a thickness of 50-300 μm.

### Claim 5 (depends on 1)

The optoelectronic sensor system according to claim 1, wherein the second layer is made of polydimethylsiloxane (PDMS).

### Claim 6 (depends on 5)

The Optoelectronic sensor system according to claim 5, wherein a substance is added to the second layer which substance changes the optical transmission behaviour of said layer.

### Claim 7 (depends on 6)

The optoelectronic sensor system according to claim 6, wherein
the added substance is an absorbing pigment or a colorant.

### Claim 8 (depends on 1)

The optoelectronic sensor system according to claim 1, wherein additional optical filter layers are located between the second layer and the optoelectronic sensor layer.

### Claim 9

An optoelectronic sensor system, comprising:
a first glass substrate for applying microarray spots on its surface,
a second glass substrate as a substrate for the sensor,
a third glass substrate as encapsulation for the sensor,
a photosensitive optoelectronic layer lying between the second and the third glass substrates including one or more semiconductor layers between two electrode layers, of which the electrode layer facing the specimen is designed to be at least partly light-permeable,
a PDMS intermediate layer between the first and the third glass substrate, and
a prism arranged on the surface of the first glass substrate, which introduces the lightbeam emitted from a light source at a specified angle into the first glass substrate, where it is guided under total reflection to the PDMS intermediate layer.

### Claim 10 (depends on 9)

The optoelectronic sensor system according to claim 9, wherein the entry angle of the light beam into the first glass substrate is greater than the critical angle for total reflection between glass and PDMS.

### Claim 11 (depends on 9)

The optoelectronic sensor system according to claim 9, wherein the thickness of the first glass substrate is 50-200 μm, and of the first glass substrate together with the third glass substrate and the PDMS intermediate layer about 300 μm and the total thickness of the sensor is about 1 mm.

### Claim 12 (depends on 9)

The optoelectronic sensor system according to claim 9, wherein the photosensitive layer is applied onto the second glass substrate.

### Claim 13 (depends on 9)

The optoelectronic sensor system according to claim 9, wherein the stimulating light source comprises a laser, LED or OLED for producing light having a wavelength of 300-650 nm.

### Claim 14 (depends on 9)

The optoelectronic sensor system according to claim 9, wherein the photosensitive layer is formed on the basis of an organic semiconductor.

### Claim 15

An optoelectronic sensor system comprising a light source for stimulating specimens, with a surface for the application of the specimens and an underlying layer system with a transparent first layer with a first refractive index, into which light can be introduced for stimulating the specimen, and an adjoining second layer with a second smaller refractive index for generating a total reflection of the introduced light and a resulting spreading planar lightwave in the first layer and an optoelectronic sensor layer lying under the second layer comprising one or more semiconductor layers between two electrode layers, of which the electrode layer facing the specimen is designed to be at least partly light permeable,
wherein the stimulating light source comprises a laser, LED or OLED for producing light having a wavelength of 300-650 nm, and
wherein the photosensitive layer is formed from an organic semiconductor.
