# US 8,569,192 B2 · Sintered complex oxide, method for producing sintered complex oxide, sputtering target and method for producing thin film

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- Number: US 8,569,192 B2
- Document ID: US8569192B2
- Status: Granted
- Kind: B2
- Application number: 13/003,626
- Filed: 2009-07-14
- Published: 2011-06-30
- Granted: 2013-10-29
- Earliest claimed: 2008-07-15
- Assignees: Tosoh Corporation
- Applicants: Hideto Kuramochi; Kenji Omi; Masanori Ichida; Hitoshi Iigusa
- Inventors: Hideto Kuramochi; Kenji Omi; Masanori Ichida; Hitoshi Iigusa
- Web page: https://patentgrep.com/patent/US8569192B2

## CPC

- C04B 35/453: based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B 35/62685: {characterised by the order of addition of constituents or additives}
- C23C 14/086: {of zinc, germanium, cadmium, indium, tin, thallium or bismuth}
- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- C04B 2235/3217: Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
- C04B 2235/3222: Aluminates other than alumino-silicates, e.g. spinel (MgAl2O4)
- C04B 2235/3232: Titanium oxides or titanates, e.g. rutile or anatase
- C04B 2235/3239: Vanadium oxides, vanadates or oxide forming salts thereof, e.g. magnesium vanadate
- C04B 2235/3241: Chromium oxides, chromates, or oxide-forming salts thereof
- C04B 2235/3244: Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
- C04B 2235/3258: Tungsten oxides, tungstates, or oxide-forming salts thereof
- C04B 2235/3284: Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
- C04B 2235/3286: Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
- C04B 2235/3287: Germanium oxides, germanates or oxide forming salts thereof, e.g. copper germanate
- C04B 2235/3293: Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
- C04B 2235/3418: Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
- C04B 2235/5409: expressed by specific surface values
- C04B 2235/658: Atmosphere during thermal treatment
- C04B 2235/763: Spinel structure AB2O4
- C04B 2235/767: Hexagonal symmetry, e.g. beta-Si3N4, beta-Sialon, alpha-SiC or hexa-ferrites
- C04B 2235/77: Density
- C04B 2235/786: Micrometer sized grains, i.e. from 1 to 100 micron
- C04B 2235/788: Aspect ratio of the grains
- C04B 2235/80: Phases present in the sintered or melt-cast ceramic products other than the main phase
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A sintered complex oxide comprising metal oxide particles (a) having a hexagonal lamellar structure and containing zinc oxide and indium, and metal oxide particles (b) having a spinel structure and containing a metal element M (where M is aluminum and/or gallium), wherein the mean value of the long diameter of the metal oxide particles (a) is no greater than 10 μm, and at least 20% of the metal oxide particles (a) have an aspect ratio (long diameter/short diameter) of 2 or greater, based on the number of particles.

## Claims

### Claim 1

A sintered complex oxide comprising:
metal oxide particles (a) having a hexagonal lamellar structure and containing zinc oxide and indium, and
metal oxide particles (b) having a spinel structure and containing a metal element M (where M is aluminum and/or gallium),
wherein the mean value of the long diameter of the metal oxide particles (a) is no greater than 10 μM, and at least 20% of the entire metal oxide particles (a) have an aspect ratio (long diameter/short diameter) of 2 or greater, based on the number of particles.

### Claim 2 (depends on 1)

A sintered complex oxide according to claim 1, wherein the maximum particle size of the metal oxide particles (b) is no greater than 10 μm.

### Claim 3 (depends on 1)

A sintered complex oxide according to claim 1, wherein:
the atomic ratio of indium with respect to the total of zinc, indium and the metal element M is 0.001-0.02, and
the atomic ratio of the metal element M with respect to the total is 0.005-0.05.

### Claim 4 (depends on 1)

A sintered complex oxide according to claim 1, wherein the metal oxide particles (b) comprise ZnM2O4 as the major component.

### Claim 5 (depends on 1)

A sintered complex oxide according to claim 1, wherein the metal element M is aluminum.

### Claim 6 (depends on 1)

A sputtering target comprising a sintered complex oxide according to claim 1.