Noble metal/non-noble metal electrode for RRAM applications
AssigneeCrossbar, Inc.
InventorsSung Hyun Jo, Kuk-Hwan Kim, Tanmay Kumar
Life of this patent
Estimating the term…
Abstract
A method for forming a non-volatile memory device includes disposing a junction layer comprising a doped silicon-bearing material in electrical contact with a first conductive material, forming a switching layer comprising an undoped amorphous silicon-bearing material upon at least a portion of the junction layer, disposing a layer comprising a non-noble metal material upon at least a portion of the switching layer, disposing an active metal layer comprising a noble metal material upon at least a portion of the layer, and forming a second conductive material in electrical contact with the active metal layer.
Claims21
A method for forming a non-volatile memory device comprises:
- disposing a junction layer comprising a doped silicon-bearing material in electrical contact with a first conductive material;
- forming a switching layer comprising an undoped amorphous silicon-bearing material upon at least a portion of the junction layer;
- disposing a layer comprising a non-noble metal material upon at least a portion of the switching layer;
- disposing an active metal layer comprising a noble metal material upon at least a portion of the layer;
- and
- forming a second conductive material in electrical contact with the active metal layer;
- wherein at least a portion of the non-noble metal material oxidizes into an oxidized form of the non-noble metal material after the active metal layer is disposed upon the layer to form an oxidized layer.
A non-volatile memory device comprises:
- a junction layer comprising a doped silicon-bearing material electrically coupled to a first conductive material;
- a switching layer comprising an undoped amorphous silicon-bearing material formed upon at least a portion of the doped silicon-bearing material;
- a first layer comprising a noble metal material disposed above at least a portion of the switching layer;
- a second conductive material electrically coupled to the first layer;
- and
- a layer comprising an oxidized form of a non-noble metal material formed between at least a portion of the first layer and at least a portion of the switching layer;
- wherein the oxidized form of the non-noble metal material is deposited as a non-oxidized form of the non-noble metal material upon the switching layer.
Dependencies are inferred from the claim text.