# US 8,569,166 B2 · Methods of modifying interlayer adhesion

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- Number: US 8,569,166 B2
- Document ID: US8569166B2
- Status: Granted
- Kind: B2
- Application number: 13/152,865
- Filed: 2011-06-03
- Published: 2011-09-29
- Granted: 2013-10-29
- Earliest claimed: 2003-03-07
- Assignees: Applied Materials, Inc.
- Applicants: Francimar Campana Schmitt; Li-Qun Xia; Son Van Nguyen; Shankar Venkataraman
- Inventors: Francimar Campana Schmitt; Li-Qun Xia; Son Van Nguyen; Shankar Venkataraman
- Web page: https://patentgrep.com/patent/US8569166B2

## CPC

- H10W 20/071: {of dielectric parts thereof}
- C23C 16/0272: {Deposition of sub-layers, e.g. to promote the adhesion of the main coating}
- C23C 16/30: Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C 16/325: {Silicon carbide}
- C23C 16/505: using radio frequency discharges
- C23C 16/56: After-treatment
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6532: {by exposure to a plasma}
- H10P 14/6539: {by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions}
- H10P 14/665: {Porous materials}
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10W 20/074: {of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers}
- H10W 20/075: {of multilayered thin functional dielectric layers}
- H10W 20/086: {involving buried masks}
- H10W 20/095: {by irradiating with electromagnetic or particle radiation (plasma treatment H10W20/096)}
- H10W 20/096: {by contacting with gases, liquids or plasmas}
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6506: {Formation of intermediate materials}
- H10P 14/662: {Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548)}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10P 14/6686: {the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane}
- H10P 14/6905: {being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H}
- H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}
- H10P 95/08: {Planarisation of organic insulating materials}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

## Claims

### Claim 1

A method for processing a substrate, comprising:
depositing a first dielectric layer on the substrate, wherein the first dielectric layer comprises silicon and carbon and is deposited by a process comprising introducing a processing gas having an organosilicon compound and reacting the processing gas to deposit the first dielectric layer;
reducing the carbon content at a surface portion of the first dielectric layer; and then
depositing a second dielectric layer adjacent the first dielectric layer, wherein the first dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

### Claim 2 (depends on 1)

The method of claim 1, wherein the reducing of the carbon content at a surface portion of the first dielectric layer comprises forming an oxidized surface on the first dielectric layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein the forming of the oxidized surface of the first dielectric layer comprises exposing the first dielectric layer to a nitrogen-free oxidizing plasma.

### Claim 4 (depends on 2)

The method of claim 2, wherein the forming of the oxidized surface of the first dielectric layer comprises introducing an oxygen-containing compound to the processing gas.

### Claim 5 (depends on 1)

The method of claim 1, wherein depositing the second dielectric layer comprises introducing a processing gas comprising an organosilicon compound and an oxidizing compound, and reacting the processing gas to deposit the first dielectric layer, wherein the reducing of the carbon content at a surface portion of the first dielectric layer comprises introducing a processing gas comprising an organosilicon compound, a carbon-containing oxidizing compound, and a nitrating compound into a processing chamber, and reacting the processing gas to deposit a dielectric material at the surface of the barrier layer.

### Claim 6 (depends on 1)

The method of claim 1, further comprising treating the first dielectric layer to an e-beam curing technique prior to subsequent processing.