# US 8,569,162 B2 · Conductive bump structure on substrate and fabrication method thereof

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- Number: US 8,569,162 B2
- Document ID: US8569162B2
- Status: Granted
- Kind: B2
- Application number: 13/644,006
- Filed: 2012-10-03
- Published: 2013-09-26
- Granted: 2013-10-29
- Earliest claimed: 2012-03-22
- Assignees: Siliconware Precision Industries Co., Ltd.
- Applicants: Siliconware Precision Industries Co., Ltd.
- Inventors: Feng-Lung Chien; Yi-Hung Lin; Yi-Hsin Chen
- Web page: https://patentgrep.com/patent/US8569162B2

## CPC

- H10W 74/012: {of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10W 70/66: Conductive materials thereof
- H10W 70/69: Insulating materials thereof
- H10W 72/01235: {by plating, e.g. electroless plating or electroplating}
- H10W 72/01255: {by using masks}
- H10W 72/019: {of bond pads}
- H10W 72/0198: {batch processes}
- H10W 72/07236: {Soldering or alloying}
- H10W 72/221: {Structures or relative sizes}
- H10W 72/222: {Multilayered bumps, e.g. a coating on top and side surfaces of a bump core}
- H10W 72/242: {relative to the surface, e.g. recessed, protruding}
- H10W 72/244: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 72/942: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 74/147: {the encapsulations being multilayered}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A conductive bump structure is formed on a substrate having a plurality of bonding pads and a first insulating layer thereon. The first insulating layer has a plurality of openings formed therein for exposing the bonding pads and a conductive post is formed on the bonding pads exposed through the openings. Therein, a gap is formed between the conductive post and the wall of the opening such that no contact occurs between the conductive post and the first insulating layer, thereby preventing delamination of the conductive bump structure caused by stresses concentrating on an interface of different materials as in the prior art.

## Claims

### Claim 1

A fabrication method of a conductive bump structure on a substrate, the substrate having a plurality of bonding pads, and a first insulating layer and a second insulating layer formed thereon, wherein the first insulating layer is formed on the second insulating layer, the first insulating layer has a plurality of first openings for exposing the corresponding bonding pads, and the second insulating layer is formed with a plurality of second openings for exposing the bonding pads, the method comprising the steps of:
forming a metal layer on each of the bonding pads;
forming a conductive post on the metal layer; and
forming a conductive material on the conductive post, wherein a gap is formed between the conductive post and a wall of the first opening, and another gap is formed between the conductive post and a wall of the second opening.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
forming a resist layer on the first insulating layer;
forming a plurality of openings in the resist layer at a position corresponding to the first openings, wherein each of the openings has a projective width less than a projective width of the first opening;
forming the conductive post on the metal layer exposed through the openings; and
removing the resist layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein the second opening is less in projective width than the first opening.

### Claim 4 (depends on 1)

The method of claim 1, wherein the metal layer is less in projective width than the second opening.

### Claim 5 (depends on 1)

The method of claim 1, further comprising forming a barrier layer between the conductive post and the conductive material.

### Claim 6

A conductive bump structure for being formed on a substrate, the substrate having a plurality of bonding pads, and a first insulating layer and a second insulating layer formed thereon, wherein the first insulating layer is formed on the second insulating layer, the first insulating layer has a plurality of first openings for exposing the corresponding bonding pads, and the second insulating layer is formed with a plurality of second openings for exposing the bonding pads, the conductive bump structure comprising:
a metal layer formed on the bonding pads exposed through the first openings;
a conductive post formed on the metal layer on the bonding pads; and
a conductive material formed on the conductive post and the metal layer on each of the bonding pads, wherein a gap is formed between the conductive post and a wall of the first opening, and another gap is formed between the conductive post and a wall of the second opening.

### Claim 7 (depends on 6)

The structure of claim 6, wherein the second opening is less in projective width than the first opening.

### Claim 8 (depends on 6)

The structure of claim 6, wherein the metal layer is less in projective width than the second opening.

### Claim 9 (depends on 6)

The structure of claim 6, further comprising a barrier layer formed between the conductive post and the conductive material.