# US 8,569,158 B2 · Method for forming ultra-shallow doping regions by solid phase diffusion

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- Number: US 8,569,158 B2
- Document ID: US8569158B2
- Status: Granted
- Kind: B2
- Application number: 13/077,721
- Filed: 2011-03-31
- Published: 2012-10-04
- Granted: 2013-10-29
- Earliest claimed: 2011-03-31
- Assignees: Tokyo Electron Limited
- Applicants: Robert D. Clark
- Inventors: Robert D. Clark
- Web page: https://patentgrep.com/patent/US8569158B2

## CPC

- H10P 32/171: {being group IV material}
- H10D 30/022: {having lightly-doped source or drain extensions selectively formed at the sides of the gates}
- H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- H10D 64/691: {comprising metallic compounds, e.g. metal oxides or metal silicates (insulators comprising nitrogen H10D64/693)}
- H10P 32/1408: {from or through or into an external applied layer, e.g. photoresist or nitride layers}
- H10P 32/141: {the applied layer comprising oxides only}
- H10P 32/1412: {through the applied layer}
- H10D 64/685: {being perpendicular to the channel plane}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method for forming an ultra-shallow dopant region in a substrate is provided. In one embodiment, the method includes depositing a dopant layer in direct contact with the substrate, the dopant layer containing an oxide, a nitride, or an oxynitride, where the dopant layer contains a dopant selected from aluminum (Al), gallium (Ga), indium (In), thallium (Tl), nitrogen (N), phosphorous (P), arsenic (As), antimony (Sb), and bismuth (Bi). The method further includes patterning the dopant layer; and forming the ultra-shallow dopant region in the substrate by diffusing the dopant from the patterned dopant layer into the substrate by a thermal treatment.

## Claims

### Claim 1

A method for forming an ultra-shallow dopant region in a substrate, the method comprising:
depositing a dopant layer in direct contact with a recessed feature of the substrate, the dopant layer containing (i) a nitride, or (ii) an oxynitride, wherein the dopant layer contains a dopant selected from aluminum (Al), gallium (Ga), indium (In), thallium (Tl), nitrogen (N), phosphorous (P), arsenic (As), antimony (Sb), and bismuth (Bi), wherein in (i) the nitride is deposited by atomic layer deposition (ALD) using a reactant gas containing NH3, and wherein in (ii) the oxynitride is deposited by ALD using a reactant gas containing a) H2O, O2, or O3, and NH3, or b) NO, NO2 or N2O, and optionally one or more of H2O, O2, O3, and NH3;
patterning the dopant layer; and
forming the ultra-shallow dopant region in the recessed feature of the substrate by diffusing the dopant from the patterned dopant layer into the recessed feature of the substrate by a thermal treatment.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
removing the patterned dopant layer from the substrate.

### Claim 3 (depends on 1)

The method of claim 1, further comprising
depositing a cap layer on the dopant layer or on the patterned dopant layer.

### Claim 4 (depends on 3)

The method of claim 3, further comprising:
removing the patterned dopant layer and the cap layer from the substrate.

### Claim 5 (depends on 1)

The method of claim 1, wherein the substrate comprises Si, Ge, In, Ga, As, Sb, GaAs, InGaAs, InGaSb, or SixGe1-x wherein 0<x<1.

### Claim 6 (depends on 1)

The method of claim 1, wherein a thickness of the dopant layer is 4 nm or less.