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AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. Basker, Huiming Bu, Kangguo Cheng, Balasubramanian S. Haran, Nicolas Loubet, Shom Ponoth, Stefan Schmitz, Theodorus E Standaert, Tenko Yamashita
Estimating the term…
A method for making dual-epi FinFETs is described. The method includes adding a first epitaxial material to an array of fins. The method also includes covering at least a first portion of the array of fins using a first masking material and removing the first epitaxial material from an uncovered portion of the array of fins. Adding a second epitaxial material to the fins in the uncovered portion of the array of fins is included in the method. The method also includes covering a second portion of the array of fins using a second masking material and performing a directional etch using the first masking material and the second masking material. Apparatus and computer program products are also described.
A method for making a field effect transistors comprising:
An article of manufacture tangibly embodying computer readable non-transitory instructions which, when implemented, cause a computer to carry out the steps of a method comprising:
Dependencies are inferred from the claim text.