# US 8,569,149 B2 · Method of treating a semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,569,149 B2 - Document ID: US8569149B2 - Status: Granted - Kind: B2 - Application number: 12/775,228 - Filed: 2010-05-06 - Published: 2011-11-10 - Granted: 2013-10-29 - Earliest claimed: 2010-05-06 - Assignees: Micron Technology, Inc. - Applicants: Roy Meade - Inventors: Roy Meade - Web page: https://patentgrep.com/patent/US8569149B2 ## CPC - H10P 34/422: {using incoherent radiation} - H10P 95/94: {Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method of treating a semiconductor device wherein there is provided a semiconductor device, the semiconductor device being at least in part chemically bonded to an undesired chemical species. The semiconductor device is subjected to light of a wavelength sufficient to cleave at least some of the chemical bonds between the semiconductor device and the undesired chemical species, and the semiconductor device is exposed to a source of a desired chemical species, such that the semiconductor device becomes at least in part chemically bonded to the desired chemical species. ## Claims ### Claim 1 A method of semiconductor device manufacture comprising: providing a semiconductor device, the semiconductor device being at least in part chemically bonded to an undesired chemical species; exposing the semiconductor device to a source of a desired chemical species; and, subjecting the semiconductor device to light of a wavelength of about 4.4 micrometers to about 5.2 micrometers sufficient to selectively cleave at least some of the chemical bonds between the semiconductor device and the undesired chemical species while cleaving less or no chemical bonds between the semiconductor device and the desired chemical species, such that the semiconductor device becomes at least in part chemically bonded to the desired chemical species. ### Claim 2 (depends on 1) The method of claim 1, wherein the semiconductor device comprises at least one semiconductor, wherein the at least one semiconductor comprises silicon. ### Claim 3 (depends on 1) The method of claim 1, wherein the semiconductor device comprises more than one semiconductor. ### Claim 4 (depends on 1) The method of claim 1, wherein at least part of the exposure of the semiconductor device to the source of the desired chemical species and at least part of the subjection of the semiconductor device to the light take place. ### Claim 5 (depends on 1) The method of claim 1, wherein the undesired chemical species comprises H. ### Claim 6 (depends on 1) The method of claim 1, wherein the desired chemical species comprises D. ### Claim 7 (depends on 1) The method of claim 1, wherein the desired chemical species comprises a halogen atom. ### Claim 8 (depends on 1) The method of claim 1, wherein the source of the desired chemical species comprises a gas that provides the desired chemical species. ### Claim 9 (depends on 1) The method of claim 1, wherein the source of the desired chemical species comprises a source that provides the desired chemical species mixed with an inert carrier. ### Claim 10 (depends on 1) The method of claim 1, wherein the source of the desired chemical species comprises D2. ### Claim 11 (depends on 1) The method of claim 1, wherein the source of the desired chemical species comprises D2O. ### Claim 12 (depends on 1) The method of claim 1, wherein the semiconductor device is at an intermediate stage of manufacturing. ### Claim 13 (depends on 1) The method of claim 1, wherein the wavelength of the light is in the infrared region. ### Claim 14 (depends on 1) The method of claim 1, wherein the wavelength of the light is about 4.8 micrometers. ### Claim 15 (depends on 1) The method of claim 1, wherein the light is polarized. ### Claim 16 (depends on 1) The method of claim 1, wherein the light is polarized at about 0 degrees. ### Claim 17 (depends on 1) The method of claim 1, wherein before and alternatively or additionally after manufacturing the semiconductor device comprises one or more of an MOS device, a transistor, a MOSFET, a TFT, a diode, an LED, a polysilicon resistor, a bipolar device, an integrated circuit, a microprocessor, memory including RAM or ROM memory, an analog circuit, a sensor, a solar cell, a photovoltaic, or a mixture thereof. ### Claim 18 (depends on 1) The method of claim 1, wherein the desired chemical species comprises at least one of: D, F, Cl, Br, I, NO, NO2, a hydrocarbon, a nitrogen-containing compound, or a combination thereof. ### Claim 19 (depends on 1) The method of claim 1, wherein the source of the desired chemical species comprises at least one of: D2, D2O, CD4, CDCl3, CD2Cl2, SiD4, SiDCl3, SiCl2D2, ND3, DCl, acetone-d6, acetonitrile-d3, CD3OD, DMSO-d6, DMF-d7, benzene-d6, cyclohexane-d12, pyridine-d5, a deuterated hydrocarbon, a deuterated amine, a deuterated nitrogen-containing compound, deuterium radicals, deuterium ions, a deuterium plasma, or a combination thereof. ### Claim 20 (depends on 1) The method of claim 1, wherein the desired chemical species is desired to be chemically bonded to the semiconductor device in place of the undesired chemical species. ### Claim 21 (depends on 1) The method of claim 1, further comprising formation of a deuterium reservoir film on said semiconductor device. ### Claim 22 (depends on 21) The method of claim 21, wherein the deuterium reservoir film is a source of deuterium for up to the lifetime of the semiconductor device. ### Claim 23 (depends on 21) The method of claim 21, wherein deuterium is the desired chemical species, and wherein a deuterium reservoir film is the source of the desired chemical species. ### Claim 24 (depends on 1) The method of claim 1, wherein the further steps of manufacturing the semiconductor device do not include temperatures which exceed the temperature required to dissociate the chemical bonds between the semiconductor device and the desired species. ### Claim 25 (depends on 1) The method of claim 1, further comprising heating to a temperature appropriate to increase the rate of diffusion of the undesired chemical species out of the semiconductor device and to increase the rate of diffusion of the desired chemical species into the semiconductor device. ### Claim 26 (depends on 1) The method of claim 1, further comprising heating the semiconductor device to a temperature appropriate to assist with the cleavage of chemical bonds between the semiconductor device and the undesired chemical species. ### Claim 27 (depends on 1) The method of claim 1, further comprising heating to a temperature of approximately 400 degrees C. ### Claim 28 (depends on 1) The method of claim 1, further comprising the use of a magnetic field, an electrical field, a bias, or a combination thereof, to increase the rate of diffusion of the undesired chemical species out of the semiconductor device. ### Claim 29 A method of semiconductor device passivation, comprising: providing a semiconductor device, the semiconductor device being at least in part chemically bonded to hydrogen; exposing the semiconductor device to a source of deuterium; and, subjecting the semiconductor device to light of a wavelength of about 4.4 micrometers to about 5.2 micrometers sufficient to selectively cleave at least some of the chemical bonds to hydrogen while cleaving less or no chemical bonds between the semiconductor device and deuterium, such that the semiconductor device becomes at least in part chemically bound to deuterium in place of hydrogen. ### Claim 30 (depends on 29) The method of claim 29, wherein the source of deuterium comprises at least one of: D2, D2O, CD4, CDCl3, CD2Cl2, SiD4, SiDCl3, SiCl2D2, ND3, DCl, acetone-d6, acetonitrile-d3, CD3OD, DMSO-d6, DMF-d7, benzene-d6, cyclohexane-d12, pyridine-d5, a deuterated hydrocarbon, a deuterated amine, a deuterated nitrogen-containing compound, deuterium radicals, deuterium ions, a deuterium plasma, or a combination thereof.