# US 8,569,147 B2 · Semiconductor device and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,569,147 B2 - Document ID: US8569147B2 - Status: Granted - Kind: B2 - Application number: 13/386,085 - Filed: 2010-06-08 - Published: 2012-05-17 - Granted: 2013-10-29 - Earliest claimed: 2009-10-02 - Assignees: Sharp Kabushiki Kaisha - Applicants: Kenshi Tada - Inventors: Kenshi Tada - Web page: https://patentgrep.com/patent/US8569147B2 ## CPC - G02F 1/136213: {Storage capacitors associated with the pixel electrode} - G02F 1/136209: {Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element} - H10D 86/411: {characterised by materials, geometry or structure of the substrates} - H10D 86/60: wherein the TFTs are in active matrices - G02F 1/133357: {Planarisation layers} - H10D 30/6723: {having light shields} - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A plurality of light-shielding films etc. are formed on a surface of a first insulating film. Then, a dummy pattern is formed on a surface of a second insulating film between adjoining ones of the light-shielding films etc., so that a height of the dummy pattern is equal to that of the second insulating film on the light-shielding films etc., as measured from the surface of the first insulating film. Thereafter, a third insulating film covering the dummy pattern and having a flat surface is formed over the surface of the second insulating film. Subsequently, a base layer is bonded to a support substrate so that the flat surface of the third insulating film faces the support substrate. A semiconductor device is manufactured in this manner. ## Claims ### Claim 1 A method for manufacturing a semiconductor device, comprising the steps of: forming on a surface of a base layer a first insulating film having a flat surface; ion implanting a delamination material into the base layer to form a delamination layer; forming a plurality of light-shielding films or back gate electrodes on the surface of the first insulating film; forming over the surface of the first insulating film a second insulating film that covers the light-shielding films or the back gate electrodes and that has an uneven surface reflecting a stepped shape of the light-shielding films or the back gate electrodes; forming a dummy pattern on the surface of the second insulating film between adjoining ones of the light-shielding films or between adjoining ones of the back gate electrodes, so that a height of the dummy pattern is equal to that of the second insulating film on the light-shielding films or the back gate electrodes, as measured from the surface of the first insulating film; forming over the surface of the second insulating film a third insulating film that covers the dummy pattern and that has a flat surface; bonding the base layer provided with the third insulating film to a support substrate so that the flat surface of the third insulating film faces the support substrate; separating and removing along the delamination layer a part of the base layer bonded to the support substrate; and forming, from the base layer remaining over the support substrate, a plurality of semiconductor layers forming semiconductor elements, so that at least a part of the semiconductor layer overlaps the light-shielding film or the back gate electrode. ### Claim 2 (depends on 1) The method of claim 1, wherein the second insulating film is comprised of a protective insulating film that suppresses passage of metal ions therethrough. ### Claim 3 (depends on 2) The method of claim 2, wherein the protective insulating film is a silicon nitride film. ### Claim 4 (depends on 1) The method of claim 1, wherein in the step of forming the third insulating film, the third insulating film is formed by forming an insulating material layer over the surface of the second insulating film, and then planarizing a surface of the insulating material layer, and an interval between the light-shielding film or the back gate electrode and the dummy pattern is larger than a thickness of the second insulating film, and is smaller than a thickness of the insulating material layer over the light-shielding film or the back gate electrode. ### Claim 5 (depends on 1) The method of claim 1, further comprising the step of: forming protruding regions as the semiconductor layers by etching the surface of the base layer, wherein the step of forming the protruding regions is performed before the step of forming the first insulating film, and in the step of forming the light-shielding films or the back gate electrodes, the light-shielding films or the back gate electrodes are formed so that the light-shielding film or the back gate electrode overlaps at least a part of the protruding region. ### Claim 6 (depends on 1) The method according to claim 1, further comprising the step of: forming protruding regions as the semiconductor regions by etching the base layer remaining over the support substrate, so that the protruding region overlaps at least a part of the light-shielding film or the back gate electrode, wherein the step of forming the protruding regions is performed after the step of separating and removing the part of the base layer. ### Claim 7 (depends on 1) The method according to claim 1, wherein the step of forming the delamination layer is performed before the step of forming the light-shielding films or the back gate electrodes. ### Claim 8 (depends on 1) The method according to claim 1, wherein in the step of forming the dummy pattern, the dummy pattern is formed by etching an insulating film formed on the surface of the second insulating film, by using the second insulating film as an etch stopper. ### Claim 9 (depends on 1) The method according to claim 1, wherein the back gate electrodes are formed in the step of forming the light-shielding films or the back gate electrodes, the method further comprising the step of: doping the semiconductor layers with an impurity element, wherein as at least one of the semiconductor elements, a capacitor element having both the semiconductor layer and the back gate electrode as a pair of capacitor electrodes is formed by forming the semiconductor layer doped with the impurity element and the back gate electrode so that the semiconductor layer faces the back gate electrode.