# US 8,569,129 B2 · Device-manufacturing scheme for increasing the density of metal patterns in inter-layer dielectrics

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- Number: US 8,569,129 B2
- Document ID: US8569129B2
- Status: Granted
- Kind: B2
- Application number: 13/149,547
- Filed: 2011-05-31
- Published: 2012-12-06
- Granted: 2013-10-29
- Earliest claimed: 2011-05-31
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Wei Yu Ma; Fang-Tsun Chu; Kvei-Feng Yen; Yao-Bin Wang
- Inventors: Wei Yu Ma; Fang-Tsun Chu; Kvei-Feng Yen; Yao-Bin Wang
- Web page: https://patentgrep.com/patent/US8569129B2

## CPC

- H10W 20/42: Vias, e.g. via plugs
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 62/128: {Anode regions of diodes}
- H10D 62/129: {Cathode regions of diodes}
- H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors}
- H10W 20/057: {by selectively depositing, e.g. by using selective CVD or plating}
- H10W 20/062: {by smoothing of conductive parts, e.g. by planarisation}
- H10W 20/089: {using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning}
- H10W 20/43: Layouts of interconnections
- H10D 62/10: Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10W 20/40: Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method includes forming a transistor at a surface of a semiconductor substrate, wherein the step of forming the transistor comprises forming a gate electrode, and forming a source/drain region adjacent the gate electrode. First metal features are formed to include at least portions at a same level as the gate electrode. Second metal features are formed simultaneously, and are over and contacting the first metal features. A first one of the second metal features is removed and replaced with a third metal feature, wherein a second one of the second metal features is not removed. A fourth metal feature is formed directly over and contacting the gate electrode, wherein the third and the fourth metal features are formed using a same metal-filling process.

## Claims

### Claim 1

A method comprising:
forming a transistor at a surface of a semiconductor substrate, wherein the step of forming the transistor comprises forming a gate electrode, and forming a source/drain region adjacent the gate electrode;
forming first metal features comprising at least portions at a same level as the gate electrode;
forming second metal features over and contacting the first metal features, wherein the second metal features are formed simultaneously;
removing and replacing a first one of the second metal features with a third metal feature, wherein a second one of the second metal features is not removed; and
forming a fourth metal feature directly over and contacting the gate electrode, wherein the third and the fourth metal features are formed using a same metal-filling process.

### Claim 2 (depends on 1)

The method of claim 1, wherein the third metal feature comprises a portion level with a portion of the fourth metal feature.

### Claim 3 (depends on 1)

The method of claim 1, wherein the first one of the second metal features is directly over a guard ring, with the guard ring being a doped surface portion of a well region in the semiconductor substrate, and wherein the second one of the second metal features is directly over a feature selected from the group consisting essentially of the source/drain region and a shallow trench isolation (STI) region in the semiconductor substrate.

### Claim 4 (depends on 1)

The method of claim 1, wherein the first one of the second metal features is directly over and electrically connected to a diode, and wherein the second one of the second metal features is directly over a feature selected from the group consisting essentially of the source/drain region and a shallow trench isolation region in the semiconductor substrate.

### Claim 5 (depends on 1)

The method of claim 1, wherein the step of removing and replacing the first one of the second metal features comprises:
etching the first one of the second metal features to form an opening;
expanding a width of the opening to greater than a width of the first one of the second metal features;
filling a metallic material into the opening; and
performing a polish to remove excess portions of the metallic material, wherein remaining portions of the metallic material form the third and the fourth metal features.

### Claim 6 (depends on 1)

The method of claim 1 further comprising:
forming metal vias over and contacting the third and the fourth metal features; and
forming metal lines over and contacting the metal vias.

### Claim 7 (depends on 1)

The method of claim 1 further comprising:
after the step of forming the gate electrode and before the step of forming the first metal features, forming a dielectric layer over the gate electrode, wherein the step of forming the first metal features comprises performing a chemical mechanical polish (CMP) using the dielectric layer as a CMP stop layer.

### Claim 8

A method comprising:
forming a transistor comprising:
forming a gate electrode over a semiconductor substrate; and
forming a source/drain region adjacent the gate electrode;
forming a guard ring as a heavily doped region in a well region of the semiconductor substrate;
forming a diode at a surface of the semiconductor substrate;
forming a first dielectric layer over the guard ring and the diode, wherein the gate electrode comprises at least a portion level with the first dielectric layer;
forming first metal features, wherein each of the first metal features comprises at least a portion in the first dielectric layer, and wherein the first metal features comprise:
a first one directly over and electrically coupled to the diode;
a second one directly over and electrically coupled to the source/drain region; and
a third one directly over and electrically coupled to the guard ring;
forming a second dielectric layer over the first dielectric layer;
forming second metal features in the second dielectric layer, wherein the second metal features comprise a first one, a second one, and a third one directly over and electrically connected to the first, the second, and the third ones of the first metal features, respectively;
removing at least one of the first and the third ones of the second metal features to form at least a first opening, wherein a respective one of the first metal features is exposed through the first opening;
patterning the second dielectric layer to form a second opening, wherein a portion of the gate electrode is exposed through the second opening; and
filling the first and the second openings with a metallic material to form third metal features.

### Claim 9 (depends on 8)

The method of claim 8, wherein the second one of the second metal features is not removed in the step of removing.

### Claim 10 (depends on 8)

The method of claim 8, wherein in the step of removing at least one of the first and the third ones of the second metal features, both the first and the third ones of the second metal features are removed.

### Claim 11 (depends on 8)

The method of claim 8 further comprising:
after the step of forming the gate electrode and before the step of forming the second dielectric layer, forming a third dielectric layer over the gate electrode and the first dielectric layer, wherein in the step of forming the first metal features, the third dielectric layer is used as a polish stop layer.

### Claim 12 (depends on 8)

The method of claim 8 further comprising expanding a width of the at least the first opening to greater than a width of a respective one of the first metal features directly under the at least one of the first and the third ones of the second metal features.

### Claim 13 (depends on 8)

The method of claim 8, wherein the step of filling the first and the second openings are performed simultaneously.

### Claim 14 (depends on 8)

The method of claim 8 further comprising:
forming an additional gate electrode directly over a shallow trench isolation (STI) region in the semiconductor substrate; and
forming a fourth one of the second metal features simultaneously with the first, the second, and the third ones of the second metal features, wherein during the step of removing, the fourth one of the second metal features is not removed.

### Claim 15

A method comprising:
forming first metal features comprising at least portions at a same level as a gate electrode of a transistor formed at a top surface of a semiconductor substrate;
forming a second metal feature over and contacting the first metal feature;
forming a third and a fourth metal feature in the same process step, wherein the third metal feature is over and contacting the first metal feature, and wherein the fourth metal feature is directly over and contacting the gate electrode;
forming metal vias over and contacting the third and the fourth metal features; and
forming metal lines over and contacting the metal vias.

### Claim 16 (depends on 15)

The method of claim 15, wherein forming the third metal feature comprises:
forming a fifth metal feature over and contacting the first metal feature in the same process step as forming the second metal feature; and
removing and replacing the fifth metal feature with the third metal feature.

### Claim 17 (depends on 16)

The method of claim 16, wherein removing and replacing the fifth metal feature with the third metal feature comprises:
etching the fifth metal feature to form an opening;
expanding a width of the opening to greater than a width of the second metal feature;
filling a metallic material into the opening; and
performing a polish to remove excess portions of the metallic material, wherein remaining portions of the metallic material form the third and the fourth metal features.

### Claim 18 (depends on 17)

The method of claim 17, wherein expanding the width of the opening comprises expanding the width of the opening to a width greater than about 125 percent of the width of the second metal feature.

### Claim 19 (depends on 15)

The method of claim 15, wherein forming the third and the fourth metal features comprises forming the third and the fourth metal features to have substantially the same width.

### Claim 20 (depends on 15)

The method of claim 15, wherein forming the first metal feature comprises forming the first metal feature of tungsten, and wherein forming the second, third, and fourth metal features comprises forming the second, third, and fourth metal features of copper.