Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device, comprising:

• providing a substrate having thereon a polysilicon resistor, a gate, and S/D regions beside the gate;
• forming over the substrate a dielectric layer covering the polysilicon resistor, the gate, and the S/D regions;
• etching the dielectric layer to form contact openings over the S/D regions and the polysilicon resistor;
• forming a metal silicide layer on the S/D regions and the polysilicon resistor in the contact openings;
• filling a metal material in the contact openings;
• removing a portion of the dielectric layer, a portion of the metal material, and a portion of the polysilicon resistor to expose the metal silicide layer on the polysilicon resistor, wherein portions of the metal material remain in the contact openings over the S/D regions to serve as S/D metal contacts;
• and
• forming metal contacts respectively over the metal silicide layer on the polysilicon resistor, over the gate, and over the S/D metal contacts.