Method for manufacturing silicon carbide semiconductor device

A method for manufacturing a silicon carbide Schottky diode, the method comprising:

• (a) implanting ions, in an ion implantation, in a silicon carbide layer having a (0001) silicon surface or a (000-1) carbon surface to obtain an ion-implanted silicon carbide layer;
• (b) annealing, in an activation annealing, the ion-implanted silicon carbide layer to obtain an annealed silicon carbide layer;
• (c) removing a first surface layer of the annealed silicon carbide layer by a dry etching to obtain a dry etched silicon carbide layer;
• (d) forming a sacrificial oxide film on a second surface layer of the dry etched silicon carbide layer by performing sacrificial oxidation thereto;
• (e) removing the sacrificial oxide film by wet etching;
• and
• (f) forming a Schottky electrode on the surface layer from which the sacrificial oxide has been removed,
• wherein a thickness of the first surface layer removed by the dry etching is from 120 nm to 240 nm,
• wherein a thickness of 20 nm to 40 nm of the second surface layer is removed by the forming and removing of the sacrificial oxide film, and
• wherein the activation annealing comprises forming a graphite film on a surface of the ion-implanted silicon carbide layer.