# US 8,569,100 B2 · Solar cell and manufacturing method thereof

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,569,100 B2
- Document ID: US8569100B2
- Status: Granted
- Kind: B2
- Application number: 13/001,107
- Filed: 2008-06-26
- Published: 2011-06-16
- Granted: 2013-10-29
- Earliest claimed: 2008-06-26
- Assignees: Mitsubishi Electric Corporation
- Applicants: Atsuro Hama; Hiroaki Morikawa
- Inventors: Atsuro Hama; Hiroaki Morikawa
- Web page: https://patentgrep.com/patent/US8569100B2

## CPC

- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 10/14: Photovoltaic cells having only PN homojunction potential barriers
- H10F 19/902: {for series or parallel connection of photovoltaic cells}
- H10F 77/211: {for photovoltaic cells}
- H10F 77/311: {for photovoltaic cells}
- Y02E 10/547: Monocrystalline silicon PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

Forming an impurity diffusion layer of the second conductivity type and an antireflective film on one surface side of a semiconductor substrate of the first conductivity type; applying the first electrode material onto the antireflective film; forming a passivation film on the other surface side of the semiconductor substrate; forming openings in the passivation film to reach the other surface side; applying a second electrode material containing impurity elements of the first conductive type to fill the openings and not to be in contact with the second electrode material of adjacent openings; applying a third electrode material onto the passivation film to be in contact with the entire second electrode material; forming at a time, by heating the semiconductor substrate at a predetermined temperature after applying the first electrode material and the third electrode material, the first electrodes, a high-concentration region, and the second electrodes and third electrode.

## Claims

### Claim 1

A solar cell manufacturing method, comprising:
a first step of forming an impurity diffusion layer, in which impurity elements of a second conductivity type are diffused, on one surface side of a semiconductor substrate of a first conductivity type;
a second step of forming an antireflective film on the impurity diffusion layer;
a third step of applying a first electrode material containing glass onto the antireflective film;
a fourth step of forming a passivation film on an other surface side of the semiconductor substrate;
a fifth step of forming, in at least part of the passivation film, a plurality of openings that reach the other surface side of the semiconductor substrate;
a sixth step of applying a second electrode material containing impurity elements of the first conductive type so as to fill the openings and not to be in contact with the second electrode material of adjacent openings;
a seventh step of applying a third electrode material onto the passivation film so as to be in contact with the entire second electrode material that is applied; and
an eighth step for simultaneously forming, by heating the semiconductor substrate at a predetermined temperature after applying the first electrode material and the third electrode material,
first electrodes that penetrate the antireflective film and are electrically connected to the impurity diffusion layer,
a high-concentration region in the other surface side of the semiconductor substrate in which impurities of the first conductive type are diffused in higher concentration than in another region of the semiconductor substrate, and
second electrodes and a third electrode that are electrically connected to the high-concentration region.

### Claim 2 (depends on 1)

The solar cell manufacturing method according to claim 1, wherein the second electrodes are formed in a dot pattern having predetermined intervals.

### Claim 3 (depends on 2)

The solar cell manufacturing method according to claim 2, wherein the second electrodes are not arranged in a soldering area of the third electrode in which an external component is to be soldered.

### Claim 4

A solar cell manufacturing method, comprising:
a first step of forming an impurity diffusion layer in which impurity atoms of a second conductivity type are diffused in one surface of a semiconductor substrate of a first conductivity type;
a second step of forming an antireflective film on the impurity diffusion layer;
a third step of applying a first electrode material including glass onto the antireflective film;
a fourth step of forming a passivation film on the other surface of the semiconductor substrate;
a fifth step of selectively applying a second electrode material containing impurity elements of the first conductive type and glass onto at least part of the passivation film;
a sixth step of applying a third electrode material onto the passivation film so as to be in contact with the entire second electrode material that is applied; and
a seventh step of simultaneously forming first electrodes that penetrate the antireflective film and are electrically connected to the impurity diffusion layer, a high-concentration region in which impurities of the first conductive type are diffused into the other surface of the semiconductor substrate in higher concentration than in other area of the semiconductor substrate, and second electrodes and a third electrode that are electrically connected to the high-concentration region, by heating the semiconductor substrate at a predetermined temperature after applying the first electrode material and the third electrode material.

### Claim 5 (depends on 4)

The solar cell manufacturing method according to claim 4, wherein the second electrodes are formed in a dot pattern having predetermined intervals.

### Claim 6 (depends on 5)

The solar cell manufacturing method according to claim 5, wherein the second electrodes are not arranged in a soldering area of the third electrode in which an external component is to be soldered.