# US 8,569,083 B2 · Light-emitting device with narrow dominant wavelength distribution and method of making the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,569,083 B2 - Document ID: US8569083B2 - Status: Granted - Kind: B2 - Application number: 12/711,678 - Filed: 2010-02-24 - Published: 2010-08-26 - Granted: 2013-10-29 - Earliest claimed: 2008-07-16 - Assignees: Epistar Corporation - Applicants: Chih-Chiang Lu; Shu-Ting Hsu; Yen-Wen Chen; Chien-Yuan Wang; Ru-Shi Liu; Min-Hsun Hsieh - Inventors: Chih-Chiang Lu; Shu-Ting Hsu; Yen-Wen Chen; Chien-Yuan Wang; Ru-Shi Liu; Min-Hsun Hsieh - Web page: https://patentgrep.com/patent/US8569083B2 ## CPC - H10H 20/8513: {having two or more wavelength conversion materials} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10H 20/8516: {having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient} - H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation. ## Claims ### Claim 1 A method of manufacturing a light-emitting device with narrow dominant wavelength distribution, comprising the steps of: providing a substrate; forming a plurality of light-emitting stacked layers on the substrate, wherein each of the plurality of light-emitting stacked layers emits a first light, and the first lights emitted by the plurality of light-emitting stacked layers have a first dominant wavelength variation; and forming a plurality of wavelength transforming layers on the plurality of light-emitting stacked layers, wherein each of the plurality of wavelength transforming layers absorbs the first light and emits a second light, and the second lights emitted by the plurality of wavelength transforming layers having a second dominant wavelength variation smaller than the first dominant wavelength variation. ### Claim 2 (depends on 1) The method of claim 1, wherein the material of the plurality of light-emitting stacked layers comprise a material containing at least one element selected from a group consisting of Al, Ga, In, N, P, and As. ### Claim 3 (depends on 1) The method of claim 1, wherein the dominant wavelengths of the first lights emitted by the plurality of light-emitting stacked layers are between 390 nm and 430 nm. ### Claim 4 (depends on 1) The method of claim 1, wherein the first lights emitted by the plurality of light-emitting stacked layers are totally absorbed by the plurality of wavelength transforming layers when the plurality of wavelength transforming layers is formed on the plurality of light-emitting stacked layers emitting the first lights. ### Claim 5 (depends on 1) The method of claim 1, wherein each of the plurality of wavelength transforming layers at least comprises a phosphor powder or a fluorescent powder, wherein the phosphor powder comprises a material selected from a group consisting of Si3MgSi2O8:Eu, BaMgAl10O17:Eu, (SrBaCa)5(PO4)3Cl:Eu, Sr3(Al2O5)Cl2:Eu2+, and Sr4Al14O25:Eu. ### Claim 6 (depends on 1) The method of claim 1, further comprising forming a plurality of wavelength converting layers on the plurality of wavelength transforming layers, the plurality of wavelength converting layers absorbing a portion of the second light and emitting a third light, wherein the second light and the third light are mixed to generate a fourth light. ### Claim 7 (depends on 6) The method of claim 6, wherein the plurality of wavelength converting layers at least comprises a material selected from a group consisting of yellow phosphor powders comprising yttrium aluminum garnet (YAG) or alkaline-earth halide aluminate, green phosphor powders comprising BaMgAl10O17:Eu, MnBa2SiO4:Eu, (Sr,Ca)SiO4:Eu, CaSc2O4:Eu, Ca8Mg(SiO4)4Cl2:Eu, Mn, SrSi2O2N2:Eu, LaPO4:Tb, Ce, Zn2SiO4:Mn, ZnS:Cu, YBO3:Ce,Tb, (Ca,Sr,Ba)Al2O4:Eu, Sr2P2O7:Eu,Mn, SrAl2S4:Eu, BaAl2S4:Eu, Sr2Ga2S5:Eu, SiAlON:Eu, KSrPO4:Tb, or Na2Gd2B2O7:Ce,Tb, and red phosphor powders comprising Y2O3:Eu, YVO4:Eu, CaSiAlN3:Eu, (Sr, Ca)SiAlN3:Eu, Sr2Si5N8:Eu, CaSiN2:Eu, (Y,Gd)BO3: Eu, (La,Y)2O2S:Eu, La2TeO6:Eu, SrS:Eu, Gd2MoO6:Eu, Y2WO6:Eu,Bi, Lu2WO6:Eu,Bi, (Ca,Sr, Ba)MgSi2O6:Eu,Mn, Sr3SiO5:Eu, SrY2S4:Eu, CaSiO3:Eu, Ca8MgLa(PO4)7:Eu, Ca8MgGd(PO4)7:Eu, Ca8MgY(PO4)7:Eu, or CaLa2S4:Ce. ### Claim 8 (depends on 6) The method of claim 6, wherein the color temperature distribution of the fourth light is less than 2000K. ### Claim 9 (depends on 1) The method of claim 1, further comprising: forming a plurality of electrodes on the plurality of light-emitting stacked layers; and forming an electrical connection structure among the plurality of electrodes to form series connection among the plurality of light-emitting stacked layers. ### Claim 10 (depends on 9) The method of claim 9, wherein the electrical connection structure is a metal wire. ### Claim 11 (depends on 9) The method of claim 9, wherein the electrical connection structure comprises: a plurality of insulating layers formed among the plurality of light-emitting stacked layers; and metal layers electrically connecting the plurality of electrodes, formed on the plurality of insulating layers. ### Claim 12 (depends on 1) The method of claim 1, further comprising dicing the substrate. ### Claim 13 A light-emitting device with narrow dominant wavelength distribution, comprising: a substrate; a plurality of light-emitting stacked layers on the substrate, wherein each of the plurality of light-emitting stacked layers emits a first light having a first dominant wavelength variation; a plurality of electrodes formed on the plurality of light-emitting stacked layers and electrically connecting therewith; and a plurality of wavelength transforming layers covering the plurality of light-emitting stacked layers, each of the plurality of wavelength transforming layers absorbing the first light and emitting a second light having a second dominant wavelength variation, wherein the first dominant wavelength variation is larger than the second dominant wavelength variation. ### Claim 14 (depends on 13) The light-emitting device of claim 13, wherein the first light is totally absorbed by the plurality of wavelength transforming layers when the plurality of wavelength transforming layer is formed on the plurality of light-emitting stacked layers emitting the first light. ### Claim 15 (depends on 13) The light-emitting device of claim 13, wherein the dominant wavelength of the first light is between 390 nm and 430 nm. ### Claim 16 (depends on 13) The light-emitting device of claim 13, wherein each of the plurality of wavelength transforming layers at least comprises a phosphor powder or a fluorescent powder, wherein the phosphor powder comprises a material selected from a group consisting of Si3MgSi2O8:Eu, BaMgAl10O17:Eu, (SrBaCa)5(PO4)3Cl:Eu, Sr3(Al2O5)Cl2:Eu2+, and Sr4Al14O25:Eu. ### Claim 17 (depends on 13) The light-emitting device of claim 13, wherein the plurality of light-emitting stacked layers comprise a material containing at least one element selected from a group consisting of Al, Ga, In, N, P, and As. ### Claim 18 (depends on 13) The light-emitting device of claim 13, further comprising a plurality of wavelength converting layers on the plurality of wavelength transforming layers, the plurality of wavelength-converting layers absorbing a portion of the second light and emitting a third light, wherein the second light and the third light are mixed to generate a fourth light. ### Claim 19 (depends on 18) The light-emitting device of claim 18, wherein the color temperature distribution of the fourth light is less than 2000K. ### Claim 20 (depends on 18) The light-emitting device of claim 18, wherein each of the plurality of wavelength-converting layers at least comprises a material selected from a group consisting of yellow phosphor powders comprising yttrium aluminum garnet (YAG) or alkaline-earth halide aluminate, green phosphor powders comprising BaMgAl10O17:Eu, MnBa2SiO4:Eu, (Sr,Ca)SiO4:Eu, CaSc2O4:Eu, Ca8Mg(SiO4)4Cl2:Eu, Mn, SrSi2O2N2:Eu, LaPO4:Tb, Ce, Zn2SiO4:Mn, ZnS:Cu, YBO3:Ce,Tb, (Ca,Sr,Ba)Al2O4:Eu, Sr2P2O7:Eu,Mn, SrAl2S4:Eu, BaAl2S4:Eu, Sr2Ga2S5:Eu, SiAlON:Eu, KSrPO4:Tb, or Na2Gd2B2O7:Ce,Tb, and red phosphor powders comprising Y2O3:Eu, YVO4:Eu, CaSiAlN3:Eu, (Sr, Ca)SiAlN3:Eu, Sr2Si5N8:Eu, CaSiN2:Eu, (Y,Gd)BO3:Eu, (La,Y)2O2S:Eu, La2TeO6:Eu, SrS:Eu, Gd2MoO6:Eu, Y2WO6:Eu,Bi, Lu2WO6:Eu,Bi, (Ca,Sr, Ba)MgSi2O6:Eu,Mn, Sr3SiO5:Eu, SrY2S4:Eu, CaSiO3:Eu, Ca8MgLa(PO4)7:Eu, Ca8MgGd(PO4)7:Eu, Ca8MgY(PO4)7:Eu, or CaLa2S4:Ce. ### Claim 21 (depends on 13) The light-emitting device of claim 13, further comprising a plurality of electrical connection structures, the plurality of electrical connection structures electrically connecting the plurality of electrodes to form a series connection among the plurality of light-emitting stacked layers. ### Claim 22 (depends on 21) The light-emitting device of claim 21, wherein each of the plurality of electrical connection structures is a metal wire. ### Claim 23 (depends on 21) The light-emitting device of claim 21, wherein each of the plurality of electrical connection structures comprises: a plurality of insulating layers among the plurality of light-emitting stacked layers; and a metal layers electrically connecting the plurality of electrodes, formed on the plurality of insulating layers.