# US 8,569,079 B2 · Method for producing an optoelectronic semiconductor component > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,569,079 B2 - Document ID: US8569079B2 - Status: Granted - Kind: B2 - Application number: 13/322,662 - Filed: 2010-05-03 - Published: 2012-03-22 - Granted: 2013-10-29 - Earliest claimed: 2009-05-29 - Assignees: OSRAM Opto Semiconductors GmbH - Applicants: Elmar Baur; Alexander Heindl; Bernd Bohm; Patrick Rode; Heribert Zull - Inventors: Elmar Baur; Alexander Heindl; Bernd Bohm; Patrick Rode; Heribert Zull - Web page: https://patentgrep.com/patent/US8569079B2 ## CPC - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - B82Y 40/00: Manufacture or treatment of nanostructures - G03F 7/0002: {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping} - H10H 20/01: Manufacture or treatment - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer. ## Claims ### Claim 1 A method of producing an optoelectronic semiconductor component comprising: providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, and the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; and applying a patterning method to the patterned surface of the photoresist, wherein 1) the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer, and 2) the second wafer is a semiconductor wafer and the second wafer has at least one active zone that generates electromagnetic radiation. ### Claim 2 (depends on 1) The method according to claim 1, wherein, before the patterning method is applied, the photoresist is removed from the outer areas of the second wafer at the places at which the trenches having a first depth are pressed into the photoresist. ### Claim 3 (depends on 1) The method according to claim 1, wherein the trenches having a first depth which are introduced into the second wafer extend at least as far as the active zone. ### Claim 4 (depends on 1) The method according to claim 1, wherein the trenches having a first depth perforate the at least one active zone of the second wafer. ### Claim 5 (depends on 1) The method according to claim 1, wherein the trenches having a first depth laterally surround the trenches having a second depth. ### Claim 6 (depends on 1) The method according to claim 1, wherein the trenches having a second depth form a coupling-out structure. ### Claim 7 (depends on 1) The method according to claim 1, wherein the second wafer is singulated into individual radiation-emitting semiconductor chips in a region of the trenches having a first depth. ### Claim 8 (depends on 1) The method according to claim 1, wherein the trenches having a first depth are “U”-shaped. ### Claim 9 A method of producing an optoelectronic semiconductor component comprising: providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, and the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; and applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer, the first wafer is a semiconductor wafer or the first wafer is a plastics material. ### Claim 10 A method of producing an optoelectronic semiconductor component comprising: providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, and the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; and applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer, and the patterning method is a single dry-chemical etching process or the patterning method consists of at least one dry- and one wet-chemical etching processing. ### Claim 11 (depends on 10) The method according to claim 10, wherein the patterning method consists of exactly one dry-chemical etching and exactly one wet-chemical etching process, the dry-chemical etching process is applied at least to a region freed of the photoresist, the photoresist is insensitive relative to the dry-chemical etching process, and the wet-chemical etching process is applied to the patterned surface of the photoresist.