# US 8,568,871 B2 · Mono-layer and multi-layer nanowire networks

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- Number: US 8,568,871 B2
- Document ID: US8568871B2
- Status: Granted
- Kind: B2
- Application number: 12/290,287
- Filed: 2008-10-28
- Published: 2009-06-04
- Granted: 2013-10-29
- Earliest claimed: 2007-10-29
- Assignees: State of Oregon acting by and through the State Board of Higher Education on behalf of Portland State University
- Applicants: Jun Jiao; Haiyan Li
- Inventors: Jun Jiao; Haiyan Li
- Web page: https://patentgrep.com/patent/US8568871B2

## CPC

- H01B 1/02: mainly consisting of metals or alloys
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- B82Y 40/00: Manufacture or treatment of nanostructures
- H01B 1/06: mainly consisting of other non-metallic substances
- H01B 1/10: sulfides
- H10P 14/265: {using solutions}
- H10P 14/3426: {Oxides}
- H10P 14/3428: {Sulfides}
- H10P 14/3462: {Nanowires}
- H10P 14/2901: {Materials}
- Y10T 428/24893: including particulate material
- Y10T 428/249921: Web or sheet containing structurally defined element or component
- Y10T 428/26: Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T 428/2913: Rod, strand, filament or fiber
- Y10T 428/298: Physical dimension
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

Disclosed is a method for nanostructure synthesis that includes growing nanostructures on a layered structure compound at a low temperature using a solution containing a solvent and at least one precursor. The method can include synthesizing and assembling nanowires in essentially the same method step. Disclosed nanostructures and nanowires are substantially uniform in diameter and single crystal. Nanowires can intersect to form networks and can be covalently bonded at points of intersection. Disclosed nanowire networks can be substantially uniform and can form an ordered network. Nanowire networks can be used to fabricate electronic and optical devices.

## Claims

### Claim 1

A method for synthesizing a plurality of nanowires comprising CdX, wherein X is S or Se; bismuth in an atomic percentage that is between about 5% and about 20%; and iodide in an atomic percentage that is between about 3% and about 10%, the method comprising:
depositing BiI3 on a substrate;
contacting the substrate with a non-polar organic solvent and a first nanowire precursor selected from Cd(OAc)2, Cd(Cl)2, Cd(NO3)2, or CdSO4; and
contacting the substrate with a second nanowire precursor selected from sulfur or selenium.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the plurality of nanowires from an ordered pattern.

### Claim 3 (depends on 1)

The method according to claim 1, wherein synthesizing the plurality of nanowires is carried out at atmospheric pressure.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the BiI3 nucleates growth of the plurality of nanowires.

### Claim 5 (depends on 1)

The method according to claim 1, wherein depositing BiI3 on the substrate comprises:
forming BiI3 flakes in a supersaturated solution thereby forming a supersaturated solution containing BiI3 flakes; and
transferring a portion of the supersaturated solution containing BiI3 flakes to the substrate surface.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the plurality of nanowires are substantially uniform in diameter.

### Claim 7 (depends on 1)

The method according to claim 1, wherein the plurality of nanowires are substantially single crystal nanowires.

### Claim 8 (depends on 1)

The method according to claim 1, wherein a portion of the plurality of nanowires intersect at points of intersection to form a nanowire network.

### Claim 9 (depends on 8)

The method according to claim 8, wherein the portion of the plurality of nanowires that intersect at points of intersection forms covalent bonds at the points of intersection.

### Claim 10 (depends on 8)

The method according to claim 8, wherein the portion of the plurality of nanowires that intersect at points of intersection forms substantially 90° angles at the points of intersection.

### Claim 11 (depends on 8)

The method according to claim 8, wherein the portion of the plurality of nanowires that intersect at points of intersection is synthesized at substantially the same time.

### Claim 12 (depends on 1)

The method according to claim 1, wherein the plurality of nanowires have an average diameter between about 20 nm and about 60 nm.

### Claim 13 (depends on 1)

The method according to claim 1, wherein the plurality of nanowires are substantially straight.

### Claim 14

A method, comprising:
providing a plurality of nanowires comprising CdX, wherein X is S or Se; bismuth in an atomic percentage that is between about 5% and about 20%; and iodide in an atomic percentage that is between about 3% and about 10%; and
removing at least a portion of a nanowire.

### Claim 15 (depends on 14)

The method of claim 14, wherein the plurality of nanowires form a nanowire network and wherein removing at least a portion of a nanowire includes removing a portion of the nanowire network.

### Claim 16 (depends on 14)

The method of claim 14, further comprising annealing the nanowires.

### Claim 17 (depends on 14)

The method of claim 14, further comprising doping at least a portion of the plurality of nanowires.

### Claim 18 (depends on 14)

The method of claim 14, further comprising electrically coupling at least one nanowire to an electrode.

### Claim 19 (depends on 14)

The method of claim 14, wherein removing at least a portion of a nanowire is accomplished through methods of micro-machining.

### Claim 20

An ordered, planar network of nanostructures, comprising:
a plurality of nanowires intersecting at a plurality of intersection points that are parallel to, and within the plane, of a substrate, wherein the plurality of nanowires are substantially a single crystalline structure and wherein the nanowires comprise CdX, wherein X is S or Se; bismuth in an atomic percentage that is between about 5% and about 20%; and iodide in an atomic percentage that is between about 3% and about 10%; and
wherein intersecting nanowires are covalently bonded at intersection points.

### Claim 21 (depends on 20)

The ordered, planar network of nanostructures according to claim 20, wherein the intersecting nanowires intersect at angles that are substantially 90°.

### Claim 22 (depends on 20)

The ordered, planar network of nanostructures according to claim 20, wherein the nanowires are substantially straight.

### Claim 23 (depends on 20)

The ordered, planar network of nanostructures according to claim 20, wherein the nanowires are substantially uniform.

### Claim 24 (depends on 20)

The ordered, planar network of nanostructures according to claim 20, wherein the plurality of nanowires is a first plurality of nanowires forming a first nanowire network layer, further comprising:
a second nanowire network layer comprising a second plurality of nanowires that are substantially a single crystalline structure and substantially simultaneously synthesized with the first nanowire network; and
wherein intersecting nanowires in the second nanowire network layer are covalently bonded at intersection points creating a substantially 90° angle.

### Claim 25

A nanowire, comprising:
CdX, wherein X is S or Se;
bismuth in an atomic percentage that is between about 5% and about 20%; and
iodide in an atomic percentage that is between about 3% and about 10%.

### Claim 26 (depends on 25)

A nanowire network formed from a plurality of nanowires according to claim 25.

### Claim 27

An ordered, planar network of nanostructures, comprising:
a plurality of nanowires intersecting at a plurality of or substantially 30° intersection points that are parallel to, and within the plane of, a substrate, wherein the plurality of nanowires are substantially a single crystalline structure and wherein the nanowires comprise CdX, wherein X is S or Se; bismuth in an atomic percentage that is between about 5% and about 20%; and iodide in an atomic percentage that is between about 3% and about 10%; and
wherein intersecting nanowires are covalently bonded at intersection points.