Heat treatment apparatus and method for heating substrate by photo-irradiation
AssigneeDainippon Screen Mfg. Co., Ltd.
InventorsHideo Nishihara, Shinichi Kato
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AssigneeDainippon Screen Mfg. Co., Ltd.
InventorsHideo Nishihara, Shinichi Kato
Estimating the term…
Two-step photo-irradiation heat treatment is performed so that a total photo-irradiation time is not more than one second and that a first step of photo-irradiation of a semiconductor wafer is performed with a light-emission output that averages out at a first light-emission output and a second step of photo-irradiation of the semiconductor wafer is performed in accordance with an output waveform that peaks at a second light-emission output that is higher than both average and maximum light-emission outputs in the first step. Performing preliminary photo-irradiation with a relatively low light-emission output in the first step and then performing intense photo-irradiation with a higher peak in the second step enables the surface temperature of a semiconductor wafer to increase further with a smaller amount of energy than in conventional cases, while preventing the semiconductor wafer from shattering.
A heat treatment method for heating a substrate by irradiating the substrate with light, comprising:
A heat treatment method for heating a substrate by irradiating the substrate with light, comprising:
A heat treatment method for heating a substrate by irradiating the substrate with light, comprising:
A heat treatment method for heating a substrate by irradiating the substrate with light, comprising:
A heat treatment method for heating a substrate by irradiating the substrate with light, comprising:
A heat treatment method for heating a substrate by irradiating the substrate with light, comprising:
A heat treatment method for heating a substrate by irradiating the substrate with light, comprising:
Dependencies are inferred from the claim text.