Hybrid silicon laser-quantum well intermixing wafer bonded integration platform for advanced photonic circuits with electroabsorption modulators

A silicon evanescent photonic device comprising:

• a silicon layer that includes a first waveguide;
• a first layer bonded to the silicon layer, the first layer comprising an n-type compound semiconductor;
• a second layer comprising a p-type compound semiconductor;
• a MQW layer that is between the first layer and the second layer, the MQW layer being characterized by an as-grown bandgap;
• a third layer that is between the MQW layer and the first layer, the third layer comprising a superlattice, and the third layer being operable for inhibiting migration of defects between the MQW layer and the first layer after the first layer and the silicon layer are bonded;
• and
• a first region comprising a first portion of the MQW layer, the first portion having a first bandgap that is shifted from the as-grown bandgap.

A method comprising:

• (1) providing a first substrate having a compound semiconductor structure that includes:
• (a) a first layer comprising an p-type compound semiconductor;
• (b) a second layer comprising a n-type compound semiconductor;
• and
• (c) an MQW layer that is between the first layer and second layer;
• wherein the first layer is proximate to a base substrate, and wherein the second layer is distal to the base substrate, and further wherein the MQW layer is characterized by an as-grown bandgap;
• performing a first quantum-well intermixing process to shift the bandgap of a first region of the MQW layer to a first bandgap, the first quantum-well intermixing process being performed through the second layer;
• bonding the first substrate to a second substrate having a silicon layer that includes a first waveguide, wherein the first substrate is bonded to the second substrate such that the second layer is proximate to the first waveguide and the MQW layer and first waveguide are optically coupled;
• and
• removing the base substrate.