System and method for hidden refresh rate modification

An apparatus for adjusting a refresh rate of a memory device, the apparatus comprising:

• a mode detector including at least one input for receiving an external signal to a memory device, wherein the mode detector is configured to receive the external signal and transmit a mode signal indicative of a functional mode of the memory device for the memory device to adjust a refresh rate of a refresh clock internal to the memory device when deassertion of the external signal received at the memory device exceeds a predetermined duration;
• and
• the memory device including the mode detector, wherein the external signal is a control signal received from a processor external to the memory device, wherein the memory device further includes:
• a plurality of memory cells;
• and
• a hidden-refresh controller, including:
• a hidden-refresh oscillator configured to generate a hidden-refresh clock signal;
• a hidden-refresh counter operably coupled to the hidden-refresh oscillator to receive the hidden-refresh clock signal, wherein the hidden-refresh counter is configured to generate a refresh pulse to exhibit the adjusted refresh rate;
• and
• the mode detector operably coupled with the refresh counter to receive the refresh pulse from the refresh counter and transmit the mode signal to the refresh counter.

An apparatus for adjusting a refresh rate of a memory device, the apparatus comprising:

• a mode detector configured to transmit one of an active mode signal and a self refresh mode signal indicative of a functional mode of the memory device, wherein the mode detector is configured to:
• maintain the active mode signal when an external signal is asserted while the functional mode is an active mode;
• maintain the self refresh mode signal when the external signal is unasserted while the functional mode is a self refresh mode;
• change from the self refresh mode signal to the active mode signal when the external signal is asserted while the functional mode is the self refresh mode;
• and
• change from the active mode signal to the self refresh mode signal when the external signal remains unasserted for a predetermined duration while the functional mode is in the active mode, wherein a refresh pulse generated internally to the memory device changes from being applied at a relatively high rate in the active mode to a relatively low rate in the self refresh mode.