Non-volatile memory device and sensing method thereof
AssigneeHynix Semiconductor Inc.
InventorDong Keun Kim
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Abstract
A non-volatile memory device and a sensing method thereof are disclosed, which can sense multi-level data using resistance variation. The non-volatile memory device includes a cell array and a sensing unit. The cell array includes a plurality of unit cells where data is read out or written. The sensing unit compares a sensing voltage corresponding to data stored in the unit cell with a reference voltage, amplifies/outputs the compared result, measures a difference in discharge time where the sensing voltage is discharged in response to a resistance value of the unit cell during an activation period of a sensing enable signal after a bit line is precharged, and senses the data in response to the measured result.
Claims21
A non-volatile memory device comprising:
- a cell array including a plurality of unit cells;
- and
- a sensing unit configured to compare a sensing voltage corresponding to data stored in the unit cell with a reference voltage in response to a sensing enable signal and amplify a comparison result to produce an output signal,
- wherein the sensing unit measures a difference in time when the sensing voltage is discharged in response to a voltage level of a bit line corresponding to a resistance value of the unit cell during an activation period of the sensing enable signal after the bit line is precharged, and senses the data in response to the measured result.
A sensing method of a non-volatile memory device, the method comprising:
- precharging a bit line;
- clamping a voltage level of the bit line corresponding to a resistance value of a unit cell;
- discharging a sensing voltage in response to the voltage level of the bit line corresponding to data stored in a unit cell;
- detecting a level of the sensing voltage at intervals of a predetermined time during an activation period of a sensing enable signal to measure a difference in time where the sensing voltage is discharged in response to the voltage level of the bit line;
- and
- sensing the data stored in the unit cell based on the measured result.
Dependencies are inferred from the claim text.