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US 8,559,245 B2Granted
Internal voltage generating circuit having selectively driven drivers in semiconductor memory apparatus
AssigneeSK hynix Inc.
InventorsKhil-Ohk Kang, Kyung-Whan Kim
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Abstract
An internal voltage generating circuit of a semiconductor memory apparatus includes a first voltage generating unit to output a first output voltage to a common node, the first output voltage is generated in response to a first reference voltage, and a second voltage generating unit to output a second output voltage to the common node, the second output voltage is generated in response to a second reference voltage.
Claims5
An internal voltage generating circuit of a semiconductor memory apparatus, comprising:
- a first voltage generating unit including
- a comparison unit that generates a first detection signal that is enabled in a low level by comparing a first reference voltage with a first division voltage, and
- a first PMOS transistor driver that drives an external power supply voltage in response to a voltage level of the first detection signal and outputs a first output voltage to a common node;
- and
- a second voltage generating unit including
- a comparison unit that generates a second detection signal that is enabled in the low level by comparing a second reference voltage with a second division voltage, and
- a second PMOS transistor driver that drives the external power supply voltage in response to a voltage level of the second detection signal and outputs a second output voltage to the common node.
4 more elements
Dependencies are inferred from the claim text.