Non-volatile memory device with plural reference cells, and method of setting the reference cells

A method of programming a first plurality of reference cells in a memory device having an array of non-volatile memory cells and a second plurality of comparators, comprising:

• (i) programming one of said first plurality of reference cells;
• (ii) reading a current of said programmed reference cell and comparing same to a current reference signal using each of said second plurality of comparators;
• wherein the second plurality of comparators is associated with said one programmed reference cell
• (iii) further programming of said one said first plurality of reference cells based upon said comparison;
• and
• repeating the steps of (i)-(iii) for a different one of said first plurality of reference cells, and its associated comparators, until all of said first plurality of reference cells are programmed.