Phase change material cell with stress inducer liner
AssigneeInternational Business Machines Corporation
InventorsCatherine A. Dubourdieu, Martin M. Frank, Bipin Rajendran, Alejandro G. Schrott
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Abstract
An example embodiment disclosed is a phase change memory cell. The memory cell includes a phase change material and a transducer positioned proximate the phase change material. The phase change material is switchable between at least an amorphous state and a crystalline state. The transducer is configured to activate when the phase change material is changed from the amorphous state to the crystalline state. In a particular embodiment, the transducer is ferroelectric material.
Claims17
A memory cell comprising:
- phase change material switchable between at least an amorphous state and a crystalline state;
- a piezoelectric transducer positioned proximate the phase change material, the piezoelectric transducer configured to activate when the phase change material is at the amorphous state;
- and
- a controller configured to, before changing the phase change material from the amorphous phase to the crystalline phase, apply a first electrical pulse polarizing the piezoelectric material such that the piezoelectric transducer applies a tensile stress upon the phase change material.
A method of operating a memory cell, the method comprising:
- polarizing a ferroelectric transducer proximate phase change material in an amorphous state such that the ferroelectric transducer maintains remnant ferroelectric polarization and applies a tensile stress to at least a portion of the phase change material.
Dependencies are inferred from the claim text.