Magnetic memory device and magnetic random access memory
AssigneeNEC Corporation
InventorsShunsuke Fukami, Kiyokazu Nagahara, Tetsuhiro Suzuki, Nobuyuki Ishiwata, Norikazu Ohshima
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Abstract
A magnetic memory cell is provided with a magnetization record layer and a magnetic tunnel junction section. The magnetization record layer is a ferromagnetic layer having a perpendicular magnetic anisotropy. The magnetic tunnel junction section is used to read data from the magnetization record layer. The magnetization record layer has a plurality of domain wall motion regions.
Claims23
A magnetic memory device comprising:
- a magnetization record layer which is a ferromagnetic layer having a perpendicular magnetic anisotropy;
- and
- a magnetic tunnel junction section used to read data from said magnetization record layer,
- wherein said magnetization record layer is provided with a plurality of domain wall motion regions,
- wherein said magnetization record layer comprises:
- (N+1) magnetization fixed regions (N is a natural number equal to or more than 2) of a 0th magnetization fixed region to an Nth magnetization fixed region which have fixed magnetization directions;
- and
- N domain wall motion regions of a first domain wall motion region to an Nth domain wall motion region which have invertible magnetization directions and in which a domain wall is movable, and
- wherein one of said N domain wall motion regions is connected between every adjacent two of said 0th magnetization fixed region to said Nth magnetization fixed region which are arranged in order.
A magnetic random access memory comprising a plurality of magnetic memory cells arranged in a matrix, each of which comprises said magnetic memory device which comprises:
- a magnetization record layer which is a ferromagnetic layer having a perpendicular magnetic anisotropy;
- and
- a magnetic tunnel junction section used to read data from said magnetization record layer,
- wherein said magnetization record layer is provided with a plurality of domain wall motion regions,
- wherein said magnetic tunnel junction section comprises:
- a sensor layer which is a ferromagnetic layer having an in-plane magnetic anisotropy and having an invertible magnetization,
- wherein said magnetization record layer comprises:
- (N+1) magnetization fixed regions (N is a natural number equal to or more than 2) of a 0th magnetization fixed region to an Nth magnetization fixed region which have fixed magnetization directions;
- and
- N domain wall motion regions of a first domain wall motion region to an Nth domain wall motion region which have invertible magnetization directions and in which a domain wall is movable, and
- wherein one of said N domain wall motion regions is connected between every adjacent two of said 0th magnetization fixed region to said Nth magnetization fixed region which are arranged in order.
Dependencies are inferred from the claim text.