Variable resistance memory device with trigger circuit for set/reset write operations
AssigneeSamsung Electronics Co., Ltd.
InventorsDeok-kee Kim, Ho Jung Kim
Life of this patent
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Abstract
A variable resistance memory device comprises a variable resistance memory cell, a switch that selectively passes a write voltage to an input terminal of the variable resistance memory cell, and a trigger circuit that controls the switch to cut off the write voltage from the input terminal upon determining that the variable resistance memory cell is programmed to a target state by detecting voltage fluctuation of the one side of variable resistance memory cell.
Claims18
A variable resistance memory device, comprising:
- a variable resistance memory cell;
- a switch that selectively passes a write voltage to an input terminal of the variable resistance memory cell;
- and
- a trigger circuit operative in response to a mode control signal indicating a program mode to control the switch to cut off the write voltage from the input terminal upon determining that the variable resistance memory cell is programmed to a target state by detecting a voltage at the input terminal.
A variable resistance memory device comprising:
- a variable resistance memory cell having an input terminal;
- a switch that selectively passes a write voltage to the input terminal;
- and
- a trigger circuit that controls operation of the switch in accordance with a switch control signal, the trigger circuit comprising;
- a comparator that compares a voltage apparent at the input terminal with a reference voltage to generate a comparison result,
- a first multiplexer that selects between the comparison result and an inverted comparison result in response to a program state control signal indicating a target state;
- and
- a second multiplexer that selects between an output of the first multiplexer and a row select signal to generate the switch control signal.
A variable resistance memory device, comprising:
- a variable resistance memory cell having an input terminal;
- a switch that selectively passes a write voltage to the input terminal in response to a switch control signal;
- and
- a trigger circuit configured to control operation of the switch in response to a determination of whether the variable resistance memory cell is programmed to a target state by;
- detecting a voltage apparent at the input terminal, comparing the voltage apparent at the input terminal with a reference voltage, generating a corresponding comparison result, and generating the switch control signal according to the comparison result,
- wherein the reference voltage is controlled according to a magnitude of a signal delay between the switch and the variable resistance memory cell.
A variable resistance memory device, comprising:
- a variable resistance memory cell having an input terminal;
- a single switch that selectively passes a write voltage to the input terminal, wherein the write voltage is one of a set voltage and a reset voltage for the variable resistance memory cell;
- and
- a trigger circuit that controls operation of the single switch by generating a switch control signal in response to a determination that the variable resistance memory cell is programmed to a target state based on a comparison of a voltage apparent at the input terminal and a reference voltage.
Dependencies are inferred from the claim text.