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US 8,559,108 B2Granted
Grating for EUV-radiation, method for manufacturing the grating and wavefront measurement system
AssigneeASML Netherlands B.V.
InventorsBorgert Kruizinga, Martijn Gerard Dominique Wehrens, Michiel David Nijkerk, Kornelis Frits Feenstra
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Abstract
A grating for EUV-radiation includes a plurality of reflecting lines. Each reflecting line includes a plurality of first reflecting dots, and a plurality of second reflecting dots arranged between each other. The first reflecting dots and the second reflecting dots are configured to reflect EUV-radiation with a mutual phase difference of 180±10 degrees mod 360 degrees.
Claims20
A grating for EUV radiation, comprising
- a patterned substrate having first locations and second locations spread between each other, the first locations and the second locations having a mutual height difference;
- a plurality of reflecting lines, each reflecting line comprising a plurality of first reflecting dots, and a plurality of second reflecting dots arranged between each other, wherein the first reflecting dots and the second reflecting dots are configured to reflect EUV-radiation with a mutual phase difference of 180±10 degrees mod 360 degrees;
- a multilayer configured to form a Bragg-reflector for the EUV-radiation at the patterned substrate, the pattern of first locations and the second locations at the substrate being propagated into a surface of the Bragg reflector as the first reflecting dots and the second reflecting dots, respectively;
- and
- a pattern of lines made of an EUV adsorbing material at the multilayer configured to delimitate reflecting lines formed by the surface of the multilayer.
2 more elements
A grating comprising
- a substrate;
- a first multilayer reflector on said substrate;
- a patterned second multilayer reflector on the first multilayer reflector, the first multilayer reflector and the second multilayer reflector being configured to form a reflecting surface;
- a plurality of reflecting lines, each reflecting line comprising a plurality of first reflecting dots, and a plurality of second reflecting dots arranged between each other, wherein the first reflecting dots and the second reflecting dots are configured to reflect EUV-radiation with a mutual phase difference of 180±10 degrees mod 360 degrees, wherein the first reflecting dots are formed by the second multilayer reflector and the second reflecting dots are formed by the first multilayer reflector;
- and
- a pattern of reflecting lines formed at said surface, the reflecting lines being separated by lines of absorbing material at said surface.
3 more elements
Dependencies are inferred from the claim text.