Poly silicon resistor, reference voltage circuit comprising the same, and manufacturing method of poly silicon resistor
AssigneeFairchild Korea Semiconductor Ltd.
InventorJung-Hyun Choi
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AssigneeFairchild Korea Semiconductor Ltd.
InventorJung-Hyun Choi
Estimating the term…
The present invention relates to a polysilicon resistor, a reference voltage circuit including the same, and a method for manufacturing the polysilicon resistor. The polysilicon resistor according includes a first polysilicon resistor and at least one of second polysilicon resistors, coupled to the first polysilicon resistor in series. The first polysilicon resistor and the at least one of the second polysilicon resistors are P-type polysilicon, and a doping concentration of the first polysilicon resistor is different from a doping concentration of the at least one of the second polysilicon resistors. The polysilicon resistor formed by serially coupling the first polysilicon resistor and the at least one of the second polysilicon resistors is applied with a constant current such that a reference voltage or a constant voltage is generated.
A polysilicon resistor comprising:
A reference voltage circuit comprising:
Dependencies are inferred from the claim text.