Low power regulator

Abstract

A voltage regulator may derive current from a bias circuitry having a constant-transconductance. The bias circuitry may generate the bias current using three NMOS devices. The temperature coefficient of the bias current may be within a specified, desired range. The bias current may be mirrored to low-power regulator circuitry to bias a diode-connected transistor in the low-power regulator circuitry to operate in the strong inversion region. A ratioed current based on the output load current may be injected into a bipolar junction transistor (BJT) device to cause the gate-source voltage (VGS) of the diode-connected device to track the VGS of the output transistor of the voltage regulator, to ensure tighter load regulation. By operating the diode-connected transistor in strong inversion, by maintaining its (VGS) constant over temperature, and by cancelling the VGS of the output transistor of the voltage regulator with the base-emitter voltage (VBE) of the BJT device, the regulated voltage output may become free of the effects of temperature and supply voltage.

Dependencies are inferred from the claim text.